单晶SiC基片的磁流变化学复合抛光

梁华卓; 付有志; 何俊峰; 徐兰英; 阎秋生

doi:10.13394/j.cnki.jgszz.2021.0108

单晶SiC基片的磁流变化学复合抛光

doi: 10.13394/j.cnki.jgszz.2021.0108

1.
广东技术师范大学机电学院, 广州 510000
2.
广东工业大学机电工程学院, 广州 510000

基金项目: 广东省基础与应用基础研究基金（2021A1515110528，2019A15150101720）。

详细信息

通讯作者:
梁华卓，男，1991年生，博士、讲师。主要研究方向：精密加工。E-mail: lianghuazhuo@gpnu.edu.cn

中图分类号: TG58;TH162
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出版历程
- 收稿日期: 2021-08-11
- 修回日期: 2021-11-01
- 录用日期: 2021-11-11
- 刊出日期: 2022-03-17

Magnetorheological chemical compound polishing of single crystal SiC substrate

1.
School of Mechatronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510000, China
2.
School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510000, China

摘要

摘要: 基于芬顿反应的磁流变化学复合抛光加工原理，对单晶SiC基片进行磁流变化学复合抛光试验，研究工艺参数对其抛光效果的影响。结果表明：随着金刚石磨粒粒径的增大，材料去除率先增大后减小，而表面粗糙度先减小后增大；随着磨粒质量分数的增大，材料去除率增大，而表面粗糙度先减小后增大；当羰基铁粉质量分数增大时，材料去除率增大，而表面粗糙度呈先减小后增大的趋势；随着氧化剂质量分数增大，材料去除率先增大后减小，而表面粗糙度呈现先减小后增大的趋势；加工间隙对材料去除率的影响较大，加工间隙为1.0 mm时，加工表面质量较好；随着工件转速和抛光盘转速增大，材料去除率均先增大后减小，表面粗糙度均先减小后增大。获得的优化的工艺参数为：磨粒粒径，1.0 μm；磨粒质量分数，5%；羰基铁粉质量分数，25%；过氧化氢质量分数，5%；加工间隙，1.0 mm；工件转速，500 r/min；抛光盘转速，20 r/min。采用优化的工艺参数对表面粗糙度约为40.00 nm的单晶SiC进行加工，获得表面粗糙度为0.10 nm以下的光滑表面。
- 磁流变化学复合抛光 /
- 芬顿反应 /
- SiC
Abstract: Based on the magnetorheological chemical composite polishing principle of Fenton reaction, the magnetorheological chemical composite polishing experiment was carried out on single crystal SiC substrate, and the influence of process parameters on the polishing effect was studied. The results show that with the increase of diamond particle size, material removal increases first and then decreases, while surface roughness decreases first and then increases. With the increase of abrasive mass fraction, material removal rate increases, and surface roughness decreases first and then increases. When the mass fraction of carbonyl iron powder increases, material removal rate increases, while surface roughness decreases first and then increases. With the increase of oxidant mass fraction, material removal increases first and then decreases, while the surface roughness decreases first and then increases. The influence of machining gap on material removal rate varies greatly. When machining gap is 1.0 mm, machined surface quality is better. With the increase of workpiece speed and polishing disc speed, the material removal rate first increases and then decreases, and the surface roughness first decreases and then increases. The optimized process parameters are as follows: the abrasive particle size is 1.0 μm, the mass fraction is 5%, the mass fraction of carbonyl iron powder is 25%, the mass fraction of hydrogen peroxide is 5%, the machining gap is 1.0 mm, the workpiece speed is 500 r/min, and the polishing disc speed is 20 r/min. The single crystal SiC with surface roughness of about 40.00 nm was processed with optimized process parameters to obtain a smooth surface with surface roughness of less than 0.10 nm.
- magnetorheological chemical compound polishing /
- Fenton reaction /
- SiC

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图 1 磁流变抛光装置

Figure 1. Magnetorheological finishing device

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图 2 磨粒粒径对抛光效果的影响

Figure 2. Effect of abrasive particle size on polishing

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图 3 磨粒质量分数对抛光效果的影响

Figure 3. Effect of abrasive mass fraction on polishing effect

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图 4 不同质量分数的磨粒抛光的SiC表面形貌

Figure 4. Surface morphology of SiC polished by abrasive particles with different mass fractions

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图 5 羰基铁粉质量分数对抛光效果的影响

Figure 5. Effect of carbonyl iron powder mass fraction on polishing effect

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图 6 过氧化氢质量分数对抛光效果的影响

Figure 6. Effect of mass fraction of hydrogen peroxide on polishing effect

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图 7 加工间隙对抛光效果的影响

Figure 7. Effect of machining gap on polishing

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图 8 不同加工间隙下的SiC表面形貌

Figure 8. Surface morphology of SiC with different machining gaps

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图 9 工件转速对抛光效果的影响

Figure 9. Effect of workpiece speed on polishing

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图 10 抛光盘转速对抛光效果的影响

Figure 10. Effect of polishing disc speed on polishing effect

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图 11 优化工艺的加工结果

Figure 11. Processing results of optimized process

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表 1 加工参数

Table 1. Machining parameters

参数名称	数值
磨粒粒径 d / μm	0.5，1.0，3.0，5.0
磨粒质量分数 ω₁ / %	1，3，5，7
羰基铁粉质量分数 ω₂ / %	20，25，30，35
过氧化氢质量分数 ω₃ / %	1，3，5，7
加工间隙 l / mm	0.6，0.8，1.0，1.2
工件转速 v_s / （r∙min⁻¹）	300，400，500，600
抛光盘转速 v_w / （r∙min⁻¹）	10，20，30，40

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参考文献(12)

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