CN 41-1243/TG ISSN 1006-852X
Volume 42 Issue 4
Aug.  2022
Turn off MathJax
Article Contents
WANG Lei, WU Runze, NIU Lin, AN Zhibo, JIN Zhuji. Study on electrochemical mechanical polishing process of silicon carbide crystal[J]. Diamond & Abrasives Engineering, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029
Citation: WANG Lei, WU Runze, NIU Lin, AN Zhibo, JIN Zhuji. Study on electrochemical mechanical polishing process of silicon carbide crystal[J]. Diamond & Abrasives Engineering, 2022, 42(4): 504-510. doi: 10.13394/j.cnki.jgszz.2022.0029

Study on electrochemical mechanical polishing process of silicon carbide crystal

doi: 10.13394/j.cnki.jgszz.2022.0029
Funds:  JIA Zhijun, MA Hongyun, WU Xuran, et al. Fundamentals of Electrochemistry (Ⅴ): Electrode Process Kinetics and Charge Transfer Process [J]. Energy Storage Science and Technology. 2013, 2(04): 402-409.
More Information
  • Received Date: 2022-03-28
  • Accepted Date: 2022-04-15
  • Rev Recd Date: 2022-04-13
  • Available Online: 2022-04-15
  • To solve the problem of low polishing efficiency of silicon carbide crystal, electrochemical mechanical polishing (ECMP) of silicon carbide was carried out to study the effect of NaOH, NaNO3 and H3PO4 electrolytes on electrochemical oxidation of silicon carbide. NaNO3 of 0.6 mol/L was selected as the electrolyte in the ECMP process and so were the diamond-alumina mixed abrasive particles. The influence of load, rotational speed, voltage and particle size on the surface quality and material removal rate of ECMP silicon carbide was studied by using orthogonal experiment. With the optimized processing parameters, the combined polishing experiment can achieve a high-efficiency material removal rate of 20.259 μm/h in the rough polishing stage, and finally obtain the surface roughness of Sa 0.408 nm through precision polishing.

     

  • loading
  • [1]
    王守国, 张岩. SiC材料及器件的应用发展前景 [J]. 自然杂志, 2011, 33(1): 42-45, 53.

    WANG Shouguo, ZHANG Yan. Application and development prospects of SiC materials and devices [J]. Chinese Journal of Nature, 2011, 33(1): 42-45, 53.
    [2]
    何艳. 光催化辅助抛光碳化硅晶片工艺及机理研究 [D]. 沈阳: 沈阳工业大学, 2019.

    HE Yan. Research on the process and mechanism of photocatalytic assisted polishing of silicon carbide wafers [D]. Shenyang: Shenyang University of Technology, 2019
    [3]
    CHEN G M, NI Z F, XU L J, et al. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates [J]. Applied Surface Science, 2015, 359: 664-668.
    [4]
    章平, 陈国美, 倪自丰等. 基于光助芬顿反应的碳化硅化学机械抛光工艺优化 [J]. 表面技术, 2022, 51(7): 253-262.

    ZHANG Ping, CHEN Guomei, NI Zifeng, et al. Optimization of chemical mechanical polishing of silicon carbide based on photo-assisted Fenton reaction [J]. Surface Technology, 2022, 51(7): 253-262.
    [5]
    ZHOU Y, PAN G S, SHI X L, et al. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry [J]. Surface and Coatings Technology, 2014, 251: 48-55.
    [6]
    LEE H S, KIM D I, AN J H, et al. Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS) [J]. CIRP Annals-Manufacturing Technology, 2010, 59(1): 333-336.
    [7]
    YANG X, OHKUBO Y, ENDO K, et al. AFM observation of initial oxidation stage of 4H-SiC (0001) in electrochemical mechanical polishing [J]. Procedia CIRP, 2018, 68: 735-740.
    [8]
    YANG X, YANG X Z, KAWAI K, et al. Highly efficient planarization of sliced 4H-SiC (0001) wafer by slurryless electrochemical mechanical polishing [J]. International Journal of Machine Tools and Manufacture, 2019, 144: 103431.
    [9]
    YANG X, YANG X, SUN R Y, et al. Obtaining atomically smooth 4H-SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing [J]. Nanomanufacturing and Metrology, 2019, 2(3): 140-147.
    [10]
    DENG H, HOSOYA K, IMANISHI Y, et al. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry [J]. Electrochemistry Communications, 2015, 52: 5-8.
    [11]
    周密愉. 铜和碳化硅电化学机械抛光工艺方法研究 [D]. 哈尔滨: 哈尔滨工业大学, 2019.

    ZHOU Miyu. Research on electrochemical mechanical polishing process of copper and silicon carbide [D]. Harbin: Harbin Institute of Technology, 2019.
    [12]
    倪自丰, 陈国美, 徐来军, 等. 不同氧化剂对6H-SiC化学机械抛光的影响 [J]. 机械工程学报, 2018, 54(19): 224-231.

    NI Zifeng, CHEN Guomei, XU Laijun, et al. Effects of different oxidizers on chemical mechanical polishing of 6H-SiC [J]. Chinese Journal of Mechanical Engineering, 2018, 54(19): 224-231.
    [13]
    林美凤. 铝与酸、碱反应的实验探索及理论研究 [J]. 化学教育, 2001(12): 35-36.

    LIN Meifeng. Experimental exploration and theoretical research on the reaction of aluminum with acid and base [J]. Chemistry Education, 2001(12): 35-36.
    [14]
    张富林. 高铬不锈钢电化学自催化预处理及切削加工性研究 [D]. 大连: 大连理工大学, 2021.

    ZHANG Fulin. Electrochemical autocatalytic pretreatment and machinability of high chromium stainless steel [D]. Dalian: Dalian University of Technology, 2021.
    [15]
    贾志军, 马洪运, 吴旭冉, 等. 电化学基础(Ⅴ)——电极过程动力学及电荷传递过程 [J]. 储能科学与技术, 2013, 2(4): 402-409.

    JIA Zhijun, MA Hongyun, WU Xuran, et al. Fundamentals of electrochemistry (Ⅴ)—Electrochemical kinetic and charge–transfer process for electrochemical reaction [J]. Energy Storage Science and Technology, 2013, 2(4): 402-409.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(8)  / Tables(5)

    Article Metrics

    Article views (1188) PDF downloads(196) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return