Citation: | LU Jiabin, CAO Jiyang, DENG Jiayun, YAN Qiusheng, HU Da. Effect of Fe3O4 characteristics on properties of solid-phase Fenton reaction lapping pellets for single-crystal SiC[J]. Diamond & Abrasives Engineering, 2022, 42(2): 223-232. doi: 10.13394/j.cnki.jgszz.2022.0008 |
[1] |
WU R, ZHOU K, YUE C Y, et al. Recent progress in synthesis, properties and potential applications of SiC nanomaterials [J]. Progress in Materials Science,2015,72:1-60. doi: 10.1016/j.pmatsci.2015.01.003
|
[2] |
彭燕, 陈秀芳, 谢雪健, 等. 半绝缘碳化硅单晶衬底的研究进展 [J]. 人工晶体学报,2021,50(4):619-628. doi: 10.3969/j.issn.1000-985X.2021.04.007
PENG Yan, CHEN Xiufang, XIE Xuejian, et al. Research progress of semi-insulating silicon carbide single crystal substrate [J]. Journal of Synthetic Crystals,2021,50(4):619-628. doi: 10.3969/j.issn.1000-985X.2021.04.007
|
[3] |
SHE X, HUANG A Q, LUCIA O, et al. Review of silicon carbide power devices and their applications [J]. IEEE Transactions on Industrial Electronics,2017,64(10):8193-8205. doi: 10.1109/TIE.2017.2652401
|
[4] |
邓家云, 潘继生, 张棋翔, 等. 单晶SiC基片的化学机械抛光技术研究进展 [J]. 金刚石与磨料磨具工程,2020,40(1):79-91.
DENG Jiayun, PAN Jisheng, ZHANG Qixiang, et al. Research progress in chemical mechanical polishing of single crystal SiC substrates [J]. Diamond & Abrasives Engineering,2020,40(1):79-91.
|
[5] |
KATO T, WADA K, HOZOMI E, et al. High throughput SiC wafer polishing with good surface morphology [J]. Materials Science Forum,2007,556/557:753-756.
|
[6] |
ENOMOTO T, SATAKE U, FUJITA T, et al. Spiral-structured fixed-abrasive pads for glass finishing [J]. CIRP Annals,2013,62(1):311-314. doi: 10.1016/j.cirp.2013.03.011
|
[7] |
DONG Z, CHENG H. Study on removal mechanism and removal characters for SiC and fused silica by fixed abrasive diamond pellets [J]. International Journal of Machine Tools and Manufacture,2014,85:1-13. doi: 10.1016/j.ijmachtools.2014.04.008
|
[8] |
ZHANG Z, XING K. Study on 6H-SiC crystal substrate (0001) C surface in FA-CMP based on diamond particle [J]. Applied Mechanics and Materials,2015,727/728:244-247. doi: 10.4028/www.scientific.net/AMM.727-728.244
|
[9] |
GAO S, HUANG H, ZHU X, et al. Surface integrity and removal mechanism of silicon wafers in chemo-mechanical grinding using a newly developed soft abrasive grinding wheel [J]. Materials Science in Semiconductor Processing,2017,63:97-106. doi: 10.1016/j.mssp.2017.02.001
|
[10] |
ZHANG Z, HUO F, WU Y, et al. Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material [J]. International Journal of Machine Tools and Manufacture,2011,51(1):18-24. doi: 10.1016/j.ijmachtools.2010.10.006
|
[11] |
LU J, CHEN R, LIANG H, et al. The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction [J]. Precision Engineering,2018,52:221-226. doi: 10.1016/j.precisioneng.2017.12.011
|
[12] |
邓家云, 潘继生, 阎秋生. 单晶SiC化学机械抛光基础研究——电芬顿反应条件优化及6H-SiC氧化效果分析 [J]. 表面技术, 2020, 49(4): 64-73.
DENG Jiayun, PAN Jisheng, YAN Qiusheng. Basic research on chemical mechanical polishing of single crystal SiC—optimization of electro-fenton reaction conditions and analysis of 6H-SiC oxidation effect [J]. Surface Technology, 2020, 49(4): 64-73.
|
[13] |
徐少平, 路家斌, 阎秋生, 等. 单晶SiC化学机械抛光液的固相催化剂研究 [J]. 机械工程学报,2017,53(21):167-173. doi: 10.3901/JME.2017.21.167
XU Shaoping, LU Jiabin, YAN Qiusheng, et al. Solid catalysts based on fenton reaction for SiC wafer in chemical mechanical polishing [J]. Journal of Mechanical Engineering,2017,53(21):167-173. doi: 10.3901/JME.2017.21.167
|
[14] |
曾帅. 基于磁控磨料定向的SiC固相反应研磨盘制备及性能研究 [D]. 广州: 广东工业大学, 2021.
ZENG Shuai. Study on the preparation and lapping performance of solid-state reaction lapping plates based on magnetically controlled abrasive orientation for SiC wafer [D]. Guangzhou: Guangdong University of Technology, 2021.
|
[15] |
DENG J, LU J, ZENG S, et al. Processing properties for the Si-face of the 4H-SiC substrates using the magnetically-controlled abrasive solidification orientation-solid-phase Fenton reaction for the fabrication of the lapping-polishing plate [J]. Diamond and Related Materials,2021,120:108652. doi: 10.1016/j.diamond.2021.108652
|
[16] |
何艳. 光催化辅助抛光碳化硅晶片工艺及机理研究 [D]. 沈阳: 沈阳工业大学, 2019.
HE Yan. Study on the technique and mechanism of photocatalysis assisted polishing silicon carbide wafer [D]. Shenyang: Shenyang University of Technology, 2019.
|
[17] |
刘小磐. 陶瓷结合剂金刚石砂轮的制备及磨削性能研究 [D]. 湖南: 湖南大学, 2012.
LIU Xiaopan. Study on preparation and grinding properties of vitrified bond diamond wheel [D]. Hunan: Hunan University, 2012.
|
[18] |
李君君, 王云峰, 张爱菊, 等. 金属铝粉和纳米Al2O3粉对陶瓷结合剂性能的影响 [J]. 硅酸盐通报,2021,40(11):3777-3783.
LI Junjun, WANG Yunfeng, ZHANG Aiju, et al. Effects of metal aluminum powder and nano-Al2O3 powder on properties of vitrified bond [J]. Bulletin of the Chinese Ceramic Society,2021,40(11):3777-3783.
|
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