Analysis on uniformity of particle trajectories in laser wafer polishing

KANG Renke; ZHAO Haiyang; ZHU Xianglong; JIAO Zhenhua

doi:10.13394/j.cnki.jgszz.2017.3.0009

Volume 37 Issue 3

Jul. 2017

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KANG Renke, ZHAO Haiyang, ZHU Xianglong, JIAO Zhenhua. Analysis on uniformity of particle trajectories in laser wafer polishing[J]. Diamond & Abrasives Engineering, 2017, 37(3): 40-45. doi: 10.13394/j.cnki.jgszz.2017.3.0009

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KANG Renke, ZHAO Haiyang, ZHU Xianglong, JIAO Zhenhua. Analysis on uniformity of particle trajectories in laser wafer polishing[J]. Diamond & Abrasives Engineering, 2017, 37(3): 40-45. doi: 10.13394/j.cnki.jgszz.2017.3.0009

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Analysis on uniformity of particle trajectories in laser wafer polishing

doi: 10.13394/j.cnki.jgszz.2017.3.0009

Dalian University of Technology, Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian 116024, Liaoning, China

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Received Date: 2017-04-12
Available Online: 2022-07-12

Abstract

Abstract

To analyze effect of rotation ratio α and swing ratio β on distribution uniformity of grain trajectory during wafer polishing, two models are established, namely relative velocity between wafer and pad, and grain trajectory on wafer surface.Distribution law of relative velocity and particle trajectory density statistics are studied.Resultsshow that when the rotation speeds of wafer and pad are kept consistent, the relative speed is stable.It is also found that the reciprocating motion of wafer following polishing head mainly influences periodicity of relative speed changes and randomness of grain trajectory distribution.In conclusion, when α=1.01 and β=0.2, the homogeneity of grain trajectory distribution on wafer is the best.
- speed distribution,
- rotation ratio,
- swing ratio,
- trajectory density

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Analysis on uniformity of particle trajectories in laser wafer polishing

doi: 10.13394/j.cnki.jgszz.2017.3.0009

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Analysis on uniformity of particle trajectories in laser wafer polishing

doi: 10.13394/j.cnki.jgszz.2017.3.0009

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