Fabrication method of high energy beam for solid-state nanopore
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摘要: 固态纳米孔因具有机械性能好、稳定性强、形状易控的优点,在基因检测、蛋白质检测、能量转换、物质分离以及水净化等领域显示出巨大的潜力,并引起众多研究人员关注。其中,形状可控、高效的固态纳米孔制造技术是现实固态纳米孔应用的前提。目前,在常见的固态纳米孔制造方法中,高能束制造方法具有高效率、高精度、高可控制造的优势。本文重点概述高能电子束、聚焦离子束、激光刻蚀法和离子径迹刻蚀法等4种固态纳米孔制造方法及其基本原理,并讨论上述方法的优缺点及其大规模可控制造的可行性。Abstract: Solid-state nanopores have drawn the interest of numerous researchers due to their excellent mechanical properties, stability, and shape control, which have demonstrated tremendous potential in gene detection, protein detection, energy conversion, material separation, and water purification. And shape-controlled and efficient solid-state nanopore manufacturing technology is the prerequisite for the application of solid-state nanopore. At present, the high energy beam manufacturing method has the advantages of high efficiency, high precision and high manufacturing controllability among the conventional solid state nanopore manufacturing methods. This paper provides an overview of four solid state nanopore fabrication methods including high energy electron beam, focused ion beam, laser etching and ion track etching and their fundamental principles. The benefits and drawbacks of these methods, as well as their feasibility for large-scale controlled fabrication are discussed.
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Key words:
- solid nanopore /
- high-energy beam manufacturing /
- manufacturing method.
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图 3 利用高能电子束制造技术制备的各种固态纳米孔的SEM图和TEM图
(a)利用高能电子束在SiO2薄膜上刻蚀初始直径约为6 nm的纳米孔(右上角插图),后经高强度TEM照射后孔径缩小至2 nm[15];(b)利用FIB制备初始直径约90 nm Si3N4孔,后经SEM辐照将孔缩小至5.3 nm[41](右上角插图);(c)利用聚焦电子束刻蚀得到纳米孔[51];(d)50 nm厚Si3N4膜上直径约7 nm纳米孔的横截面示意图,7 nm孔的俯视图(1),2 nm × 2 nm孔阵列倾斜视图(2)[52];(e)孔径为3.3 nm的Mg纳米孔[47],后在散焦电子束辐照下完全闭合(右上插图);(f)利用SEM制备出孔径小于5 nm的绝缘纳米孔[49]。
Figure 3. SEM and TEM diagrams of various solid nanopores prepared by high-energy electron beam manufacturing technology
(a) A nanopore with an initial diameter of about 6 nm is etched on the SiO2 film by high-energy electron beam (the illustration in the upper right corner), and then the pore size is reduced to 2 nm after high intensity TEM irradiation[15]; (b) The holes with initial diameter of about 45 nm Si3N4 were prepared by FIB, and then the hole was reduced to 5.3 nm [41] by SEM irradiation (illustration in the upper right corner); (c) Nanoholes are obtained by focused electron beam etching[51]; (d) Cross-sectional diagram of about 7 nm diameter nanopore on 50 nm thick Si3N4 film, top view of 7 nm hole (1), 2 nm× 2 nm inclined view of nanopore array (2)[52]; (e) Mg nanopore with a diameter of 3.3 nm [47] was completely closed under the irradiation of defocused electron beam (upper right illustration); (f) Insulated nanopores with aperture less than 5 nm were prepared by SEM[49].
图 4 聚焦离子束制造技术制备的固态纳米孔的SEM和TEM图
(a) Ar + 离子制备Si3N4纳米孔[13]; (b) Ga + 离子制备SiC纳米孔[57];(c)聚焦离子束制备的4 nm Si3N4纳米孔[55];(d) He + 离子制备CNM纳米孔[30];(e)He + 离子制备Si3N4阵列孔和单孔(右上角插图)[65];(f)石墨烯纳米孔[63]。
Figure 4. SEM and TEM images of solid nanopores prepared by focused ion beam manufacturing technology
(a) Preparation of Si3N4 nanopore by Ar + ion[13]; (b) Preparation of SiC nanopore by Ga + ion[57]; (c) 4 nm Si3N4 nanopore prepared by focused ion beam[55]; (d) CNM nanopore prepared by He + ion[30]; (e) Si3N4 array holes and single holes prepared by He + ions (illustration in the upper right corner)[65]; (f) Graphene nanopore[63].
表 1 常见的高能束加工固态纳米孔的方法
Table 1. Common methods of machining solid-state nanopores with high-energy beams
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