CN 41-1243/TG ISSN 1006-852X
Volume 44 Issue 4
Sep.  2024
Turn off MathJax
Article Contents
YANG Yufei, LI Xiang, HE Yan, LIU Ming, XU Zicheng, GAO Xingjun. Simulation and experimental study on micro-cutting silicon carbide crystal with single grain diamond[J]. Diamond & Abrasives Engineering, 2024, 44(4): 495-507. doi: 10.13394/j.cnki.jgszz.2023.0158
Citation: YANG Yufei, LI Xiang, HE Yan, LIU Ming, XU Zicheng, GAO Xingjun. Simulation and experimental study on micro-cutting silicon carbide crystal with single grain diamond[J]. Diamond & Abrasives Engineering, 2024, 44(4): 495-507. doi: 10.13394/j.cnki.jgszz.2023.0158

Simulation and experimental study on micro-cutting silicon carbide crystal with single grain diamond

doi: 10.13394/j.cnki.jgszz.2023.0158
More Information
  • Received Date: 2023-08-03
  • Accepted Date: 2023-11-07
  • Rev Recd Date: 2023-10-12
  • Available Online: 2023-11-07
  •   Objectives  The hardness of silicon carbide is second only to those of diamond, cubic boron nitride, and boron carbide, making its processing very difficult. Compared with plastic metal materials, the brittle and hard nature of silicon carbide makes it prone to brittle fracture and edge fragmentation during processing, greatly affecting its superior performance. Therefore, it is crucial to carefully select appropriate cutting methods and establish reasonable cutting process conditions.  Methods  The finite element software Abaqus was used to establish a model of micro-cutting silicon carbide crystal with a diamond conical grain, and the selection range of micro-cutting depth and speed was determined by the pre-simulation model. Then, the main and secondary factors affecting the cutting force were analyzed, and the influence of a single cutting parameter on the cutting effect was studied. In addition, with the help of Hertzian contact stress, the influence of the loading force on the friction force, the morphology of the cutting edge, and the cutting depth was verified by the tip scratching experiment.  Results  (1) The cutting depth is a crucial factor that greatly impacts the quality of the cutting process. When the cutting depth is less than 1.50 μm, the removal of silicon carbide material primarily occurs through plastic removal. However, when the cutting depth exceeds 1.50 μm, cracks of varying lengths and pits of different sizes gradually form at the cutting edge of the workpiece. As the cutting depth increases, the length of cracks and the number of pits also increase. This type of removal is known as brittle removal. To ensure the integrity of the cutting edge and minimize damage to the silicon carbide workpiece, it is essential to control the cutting depth of the abrasive particles during stages I and III, keeping it below 1.50 μm. (2) Through variance and range analysis of the main cutting force, the relationship between the three factors and the magnitude of the main cutting force is V > W > U, meaning that cutting depth is the most important factor affecting cutting force. The optimal solution V1W1U2 and cutting parameters have been determined, namely a diamond abrasive cutting depth of 0.50 μm, a diamond abrasive cutting edge angle of 60°, and a cutting speed of 76 m/s. Cutting depth is the main factor affecting the magnitude of cutting force, while cutting speed and cutting edge angle are secondary factors. (3) As the cutting depth increases, the affected area surrounding the cut also expands, causing an increase in equivalent stress even in areas where the abrasive particles do not come into contact with the workpiece. This phenomenon is responsible for the development of cutting edge cracks and pits. Additionally, as the cutting depth increases, the main cutting force experiences greater fluctuations. To maintain cutting stability, it is important to control the cutting depth. In the high-speed cutting range of 60-106 m/s, the impact of cutting speed on cutting force is minimal. Therefore, increasing the cutting speed can be an effective method for improving cutting efficiency and ensuring high-quality cuts. For optimal results, a cutting depth of 0.50 μm and a cutting speed of 76 m/s are recommended. (4) The coefficient of friction is not only affected by the properties of the two materials in contact, but also by the depth of the diamond probe pressing into the workpiece. The greater the depth of pressing, the higher the coefficient of friction and the greater the frictional force. The surface of the microgrooves is clear and tidy, with relatively smooth edges. Under the same Hertz contact stress, the simulated depth values and experimental depth values show a consistent trend with the change in loading force.  Conclusions  Finite element simulation has become a valuable tool for studying the interaction and removal of materials in the precision machining of crystal materials. The purpose of this article is to investigate the removal characteristics of silicon carbide and determine the optimal range of cutting parameters. The study analyzes cutting force, stress distribution, and removal mechanisms, and proposes effective methods for enhancing cutting efficiency. The findings of this research can contribute to improving the smoothness of the cutting edge and reducing subsurface damage to the workpiece. Furthermore, this research has significant implications for understanding the impact of process parameters on cutting accuracy and the removal mechanism of hard and brittle materials during cutting.

     

  • loading
  • [1]
    XUN Q, XUN B Y, LI Z X, et al. Application of SiC power electronic devices in secondary power source for aircraft [J]. Renewable and Sustainable Energy Reviews,2017,70:1336-1342. doi: 10.1016/j.rser.2016.12.035
    [2]
    HE Y, YUAN Z W, TANG M L, et al. Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC [J]. Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science,2022,236(24):11464-11478. doi: 10.1177/09544062221117953
    [3]
    CHOI P H, KIM Y P, KIM M S, et al. Side-illuminated photoconductive semiconductor switch based on high purity semi-insulating 4H-SiC [J]. IEEE Transactions on Electron Devices,2021,68(12):6216-6221. doi: 10.1109/TED.2021.3117535
    [4]
    MATSUNAMI H. Fundamental research on semiconductor SiC and its applications to power electronics [J]. Proceedings of the Japan Academy Series B-Physical and Biological Sciences,2020,96(7):235-254. doi: 10.2183/pjab.96.018
    [5]
    KITAHARA H, NODA Y, YOSHIDA F, et al. Mechanical behavior of single crystalline and polycrystalline silicon carbides evaluated by Vickers indentation [J]. Journal of the Ceramic Society of Japan,2001,109(1271):602-606. doi: 10.2109/jcersj.109.1271_602
    [6]
    魏正义, 高兴军, 邓子龙, 等. 基于ABAQUS的超声椭圆振动车削GH4169的切削性能研究 [J]. 辽宁石油化工大学学报,2021,41(6):67-71. doi: 10.3969/j.issn.1672-6952.2021.06.013

    WEI Zhengyi, GAO Xingjun, DENG Zilong, et al. Research on cutting performance of GH4169 in ultrasonic ellipticavibration turning based on ABAQUS [J]. Journal of Liaoning Petrochemical University,2021,41(6):67-71. doi: 10.3969/j.issn.1672-6952.2021.06.013
    [7]
    KAMIYA O, TAKAHASHI M, MIYANO Y, et al. Cutting of diamond substrate using fixed diamond grain saw wire [J]. Materials,2022,15(16):5524. doi: 10.3390/ma15165524
    [8]
    YIN Y K, GAO Y F, YANG C F. Sawing characteristics of diamond wire cutting sapphire crystal based on tool life cycle [J]. Ceramics International,2021,47(19):26627-26634. doi: 10.1016/j.ceramint.2021.06.070
    [9]
    ZHANG J G, SUZUKI N, WANG YI L, et al. Fundamental investigation of ultra-precision ductile machining of tungsten carbide by applying elliptical vibration cutting with single crystal diamond [J]. Journal of Materials Processing Technology,2014,214(11):2644-2659. doi: 10.1016/j.jmatprotec.2014.05.024
    [10]
    WANG H J, YANG T. A review on laser drilling and cutting of silicon [J]. Journal of the European Ceramic Society,2021,41(10):4997-5015. doi: 10.1016/j.jeurceramsoc.2021.04.019
    [11]
    CHEN Z J, ZHAO S D, ZHAO Y H. Electrochemical jet-assisted precision grinding of single-crystal SiC using soft abrasive wheel [J]. International Journal of Mechanical Sciences,2021,195:106239. doi: 10.1016/j.ijmecsci.2020.106239
    [12]
    JI S J, LIU LL, ZHAO J, et al. Finite element analysis and simulation about microgrinding of SiC [J]. Journal of Nanomaterials, 2015, 2015: 575398.
    [13]
    WEI J H, WANG H J, LIN B, et al. A force model in single grain grinding of long fiber reinforced woven composite [J]. The International Journal of Advanced Manufacturing Technology,2019,100(1/2/3/4):541-52. doi: 10.1007/s00170-018-2719-x
    [14]
    GU Y, ZHU W, LIN J, et al. Subsurface damage in polishing process of silicon carbide ceramic [J]. Materials (Basel),2018,11(4):506. doi: 10.3390/ma11040506
    [15]
    GUERRINI G, BRUZZONE A A G, CRENNA F. Single grain grinding: An experimental and FEM assessment [J]. Procedia CIRP,2017,62:287-292. doi: 10.1016/j.procir.2016.07.082
    [16]
    DAI J B, SU H H, HU H, et al. The influence of grain geometry and wear conditions on the material removal mechanism in silicon carbide grinding with single grain [J]. Ceramics International,2017,43(15):11973-11980. doi: 10.1016/j.ceramint.2017.06.047
    [17]
    ZHOU W B, SU H H, DAI J B, et al. Numerical investigation on the influence of cutting-edge radius and grinding wheel speed on chip formation in SiC grinding [J]. Ceramics International,2018,44(17):21451-21460. doi: 10.1016/j.ceramint.2018.08.206
    [18]
    LIU Y, LI B Z, WU C J, et al. Smoothed particle hydrodynamics simulation and experimental analysis of SiC ceramic grinding mechanism [J]. Ceramics International,2018,44(11):12194-12203. doi: 10.1016/j.ceramint.2018.03.278
    [19]
    DU J G, ZHANG H Z, MA J, et al. Simulation and experimental study on single diamond grit of machining SiCp/Al composites [J]. Modern Manufacturing Engineering,2019,26(1):29-40.
    [20]
    DUAN N, YU Y Q, WANG W S, et al. SPH and FE coupled 3D simulation of monocrystal SiC scratching by single diamond grit [J]. International Journal of Refractory Metals and Hard Materials,2017,64:279-293. doi: 10.1016/j.ijrmhm.2016.09.016
    [21]
    NGUYEN V T, FANG T H. Material removal and interactions between an abrasive and a SiC substrate: a molecular dynamics simulation study [J]. Ceramics International,2020,46(5):5623-5633. doi: 10.1016/j.ceramint.2019.11.006
    [22]
    LIU Y, LI B Z, KONG L F. Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation [J]. AIP Advances,2018,8(3):035109. doi: 10.1063/1.5019683
    [23]
    MENG B B, YUAN D D, XU S L. Study on strain rate and heat effect on the removal mechanism of SiC during nano-scratching process by molecular dynamics simulation [J]. International Journal of Mechanical Sciences,2019,151:724-732. doi: 10.1016/j.ijmecsci.2018.12.022
    [24]
    WU Z H, ZHANG L C, YANG S Y. Effect of abrasive grain position patterns on the deformation of 6H-silicon carbide subjected to nano-grinding [J]. International Journal of Mechanical Sciences,2021,211:106779. doi: 10.1016/j.ijmecsci.2021.106779
    [25]
    ZHOU P, SHI X D, LI J, et al. Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process [J]. Ceramics International,2019,45(12):14614-14624. doi: 10.1016/j.ceramint.2019.04.180
    [26]
    凡林, 邓子龙, 高兴军, 等. 基于田口法的微织构PCBN刀具织构参数优化 [J]. 辽宁石油化工大学学报,2021,41(4):71-77. doi: 10.3969/j.issn.1672-6952.2021.04.012

    FAN Lin, DENG Zilong, GAO Xingjun, et al. Optimization of texture parameters of micro-textured PCBN tool based on taguchi method [J]. Journal of Liaoning Petrochemical University,2021,41(4):71-77. doi: 10.3969/j.issn.1672-6952.2021.04.012
    [27]
    SHIBATA T, FUJII S, MAKINO E, et al. Ductile-regime turning mechanism of single-crystal silicon [J]. Precision Engineering,1996,18(2/3):129-137.
    [28]
    CHAI P, LI S J, LI Y. Modeling and experiment of the critical depth of cut at the ductile–brittle transition for a 4H-SiC single crystal [J]. Micromachines,2019,10(6):382. doi: 10.3390/mi10060382
    [29]
    ZHANG B, YIN J F. The ‘skin effect’ of subsurface damage distribution in materials subjected to high-speed machining [J]. International Journal of Extreme Manufacturing,2019,1(1):012007. doi: 10.1088/2631-7990/ab103b
    [30]
    ZHANG D Z, ZHAO L, ROY A. Mechanical behavior of silicon carbide under static and dynamic compression [J]. Journal of Engineering Materials and Technology,2019,141(1):011007. doi: 10.1115/1.4040591
    [31]
    TAN Y Q, YANG D M, SHENG Y. Discrete element method (DEM) modeling of fracture and damage in the machining process of polycrystalline SiC [J]. Journal of the European Ceramic Society,2009,29(6):1029-1037. doi: 10.1016/j.jeurceramsoc.2008.07.060
    [32]
    AGARWAL S, RAO P V. Experimental investigation of surface/subsurface damage formation and material removal mechanisms in SiC grinding [J]. International Journal of Machine Tools and Manufacture,2008,48(6):698-710. doi: 10.1016/j.ijmachtools.2007.10.013
    [33]
    WANG X, LI Y Q, XU J K, et al. Comparison and research on simulation models of aluminum-based silicon carbide micro-cutting [J]. International Journal of Advanced Manufacturing Technology,2020,109(1/2):589-605.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(17)  / Tables(5)

    Article Metrics

    Article views (605) PDF downloads(31) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return