CN 41-1243/TG ISSN 1006-852X
Volume 42 Issue 6
Jan.  2023
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BIAN Da, SONG Enmin, NI Zifeng, QIAN Shanhua, ZHAO Yongwu. Optimization of CMP processing parameters for Si based on response surface method[J]. Diamond &Abrasives Engineering, 2022, 42(6): 745-752. doi: 10.13394/j.cnki.jgszz.2022.0081
Citation: BIAN Da, SONG Enmin, NI Zifeng, QIAN Shanhua, ZHAO Yongwu. Optimization of CMP processing parameters for Si based on response surface method[J]. Diamond &Abrasives Engineering, 2022, 42(6): 745-752. doi: 10.13394/j.cnki.jgszz.2022.0081

Optimization of CMP processing parameters for Si based on response surface method

doi: 10.13394/j.cnki.jgszz.2022.0081
  • Received Date: 2022-06-01
  • Accepted Date: 2022-08-01
  • Rev Recd Date: 2022-07-06
  • To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology. The results show that polishing pressure has the largest influence on the material removal rate and surface roughness of Si polishing. The second largest influential factor is polishing rotational speed and the third is polishing fluid flow rate. The prediction models of material removal rate and surface roughness are established. The optimum processing parameters are obtained when the polishing pressure is 48.3 kPa, polishing rotational speed is 70 r/min and polishing fluid flow rate is 65 mL/min with the prediction models and by experiments. With these processing parameters, the material removal rate and surface roughness are 1 058.2 nm/min and 0.771 nm, respectively.

     

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