CN 41-1243/TG ISSN 1006-852X
Volume 42 Issue 6
Jan.  2023
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WU Cheng, LI Jun, HOU Tianyi, YU Ningbin, GAO Xiujuan. Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal[J]. Diamond &Abrasives Engineering, 2022, 42(6): 720-727. doi: 10.13394/j.cnki.jgszz.2022.0043
Citation: WU Cheng, LI Jun, HOU Tianyi, YU Ningbin, GAO Xiujuan. Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal[J]. Diamond &Abrasives Engineering, 2022, 42(6): 720-727. doi: 10.13394/j.cnki.jgszz.2022.0043

Effect of pad and slurry on fixed abrasive polishing of gallium oxide crystal

doi: 10.13394/j.cnki.jgszz.2022.0043
  • Received Date: 2022-04-10
  • Accepted Date: 2022-06-17
  • Rev Recd Date: 2022-06-14
  • Gallium oxide crystal is one of the most representative fourth generation semiconductor materials with the advantages of high band gap, high voltage resistance and short absorption cutoff edge. It has broad application prospects. Micro-cracks, scratches and other surface defects are prone to appear in the polishing process of Gallium oxide crystal, which is difficult to achieve high-quality surface processing and cannot meet the requirements of corresponding devices. Moreover, the existing polishing process of gallium oxide crystal is complex and inefficient. Fixed abrasive polishing technology has the advantages of controllable abrasive distribution and depth of cut, and high utilization rate of abrasive. In this study, fixed abrasive polishing of gallium oxide crystal was adopted, and the effect of matrix hardness, abrasive concentration of polishing pad, the additives of polishing slurry on material removal rate and surface quality were investigated. The results show that when the hardness of the polishing pad is moderate II, the abrasive concentration is 100%, and the slurry additive is oxalic acid, the material removal rate is 68 nm/min and the surface roughness Sa value is 3.17 nm in fixed abrasive polishing of gallium oxide crystal. Fixed abrasive polishing technology can achieve high-efficient and high-quality polishing of gallium oxide crystal.

     

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  • [1]
    陶绪堂, 穆文祥, 贾志泰. 宽禁带半导体氧化镓晶体和器件研究进展 [J]. 中国材料进展,2020(2):113-123. doi: 10.7502/j.issn.1674-3962.201809009

    TAO Xutang, MU Wenxiang, JIA Zhitai. Research progress in the crystal growth and devices of wide-bandgap β-Ga2O3 [J]. Materials China,2020(2):113-123. doi: 10.7502/j.issn.1674-3962.201809009
    [2]
    PEARTON S J, YANG J, CARY P H, et al. A review of Ga2O3 materials, processing, and devices [J]. Applied Physics Reviews,2018,5(1):011301. doi: 10.1063/1.5006941
    [3]
    YANG J, REN F, TADJER M, et al. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW·cm-2 figure-of-merit [J]. AIP Advances,2018,8(5):055026. doi: 10.1063/1.5034444
    [4]
    BLEVINS J D, STEVENS K, LINDSEY A, et al. Development of large diameter semi-insulating gallium oxide [J]. IEEE Transactions on Semiconductor Manufacturing,2019,32(4):466-472. doi: 10.1109/TSM.2019.2944526
    [5]
    HOSHIKAWA K, KOBAYASHI T, OHBA E. 50 mm diameter Sn-doped (001) beta-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air [J]. Journal of Crystal Growth,2020,546:16-27.
    [6]
    龚凯, 周海, 韦嘉辉, 等. 抛光垫特性对氧化镓CMP影响的实验研究 [J]. 工具技术,2018,52(6):29-32. doi: 10.3969/j.issn.1000-7008.2018.06.021

    GONG Kai, ZHOU Hai, WEI Jiahui, et al. Experimental study on influence of polishing pad characteristics on gallium oxide CMP [J]. Tool Engineering,2018,52(6):29-32. doi: 10.3969/j.issn.1000-7008.2018.06.021
    [7]
    徐世海, 李晖, 高飞, 等. β-Ga2O3(100)面的CMP研究及优化 [J]. 微纳电子技术, 2017, 54(3): 208-212.

    XU Shihai, LI Hui, GAO Fei, et al. Investigation and optimization of the CMP of the β-Ga2O3 (100) face [J] Micronanoelectronic Technology, 2017, 54(3): 208-212.
    [8]
    HUANG C, ZHOU H, ZHU Y, et al. Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate [J]. Precision Engineering,2019,56:184-190. doi: 10.1016/j.precisioneng.2018.11.013
    [9]
    明舜, 李军, 张羽驰, 等. 磨粒尺寸和基体硬度对固结磨料抛光YAG晶体的影响 [J]. 金刚石与磨料磨具工程,2020,40(3):86-90. doi: 10.13394/j.cnki.jgszz.2020.3.0014

    MING Shun, LI Jun, ZHANG Yuchi, et al. Effect of abrasive size and matrix hardness on fixed abrasive polishing of YAG crystal [J]. Diamond & Abrasives Engineering,2020,40(3):86-90. doi: 10.13394/j.cnki.jgszz.2020.3.0014
    [10]
    LI J, TANG Y, SONG L, et al. Effect of FAP characteristics on fixed abrasive polishing of CaF2 crystal [J]. International Journal of Nanomanufacturing,2019,15(3):259. doi: 10.1504/IJNM.2019.100460
    [11]
    黄建东, 李军, 宋龙龙, 等. 抛光液酸碱性对固结磨料抛光硫化锌晶体的影响 [J]. 人工晶体学报,2016,45(2):304-308. doi: 10.3969/j.issn.1000-985X.2016.02.002

    HUANG Jiandong, LI Jun, SONG Longlong, et al. Influence of different acid and alkaline slurry on fixed abrasive polishing of zinc sulfide crystal [J]. Journal of Synthetic Crystals,2016,45(2):304-308. doi: 10.3969/j.issn.1000-985X.2016.02.002
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