CN 41-1243/TG ISSN 1006-852X
Volume 39 Issue 4
Aug.  2019
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WANG Zhiwei, ZOU Qin, LI Yanguo, WANG Mingzhi. Study on boron and its co-doped diamond films[J]. Diamond & Abrasives Engineering, 2019, 39(4): 1-8. doi: 10.13394/j.cnki.jgszz.2019.4.0001
Citation: WANG Zhiwei, ZOU Qin, LI Yanguo, WANG Mingzhi. Study on boron and its co-doped diamond films[J]. Diamond & Abrasives Engineering, 2019, 39(4): 1-8. doi: 10.13394/j.cnki.jgszz.2019.4.0001

Study on boron and its co-doped diamond films

doi: 10.13394/j.cnki.jgszz.2019.4.0001
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  • Rev Recd Date: 2019-07-23
  • Available Online: 2022-04-06
  • Adding impurity elements into diamond can obtain other properties on the basis of retaining its original excellent properties, for example, doping boron element can make diamond become P-type semiconductor. Co-doping other elements can improve the electrical properties and catalytic activity of diamond, and even change the conductive mechanism of boron-doped diamond films. In this paper, the preparation methods, structural characteristics and micro-morphology of boron and its co-doped diamond films are introduced in detail. The factors affecting the properties of boron and its co-doped diamond films and the modification methods are summarized.

     

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