Coarse grinding parameters on sapphire wafer

DONG Yunna

doi:10.13394/j.cnki.jgszz.2017.3.0017

Volume 37 Issue 3

Jul. 2017

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DONG Yunna. Coarse grinding parameters on sapphire wafer[J]. Diamond & Abrasives Engineering, 2017, 37(3): 88-90. doi: 10.13394/j.cnki.jgszz.2017.3.0017

Citation:

DONG Yunna. Coarse grinding parameters on sapphire wafer[J]. Diamond & Abrasives Engineering, 2017, 37(3): 88-90. doi: 10.13394/j.cnki.jgszz.2017.3.0017

DONG Yunna. Coarse grinding parameters on sapphire wafer[J]. Diamond & Abrasives Engineering, 2017, 37(3): 88-90. doi: 10.13394/j.cnki.jgszz.2017.3.0017

Citation:

DONG Yunna. Coarse grinding parameters on sapphire wafer[J]. Diamond & Abrasives Engineering, 2017, 37(3): 88-90. doi: 10.13394/j.cnki.jgszz.2017.3.0017

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Coarse grinding parameters on sapphire wafer

doi: 10.13394/j.cnki.jgszz.2017.3.0017

DONG Yunna

Tianjin Ximei Technology Co., Ltd., Tianjin 300382, China

More Information

Received Date: 2017-04-15
Available Online: 2022-07-12

Abstract

Abstract

Coarse grinding sapphire wafer surface technology is researched by using 61 μm boron carbide, Single factor experiment is used to discuss and test the influence of slurry, lapping pressure and boron carbide content.Resultsshow that the best effect appears when mass fraction of boron carbide is 20% with CM-F series slurry, flow rate 250 mL/min, lapping at 80r/min for 30 min, grinding pressure 2.8×10⁴ Pa, the material removal rate can reach 2.47μm/min, with no visible scratches on the surface.The surface quality improved obviously using the OLYMPUS-MX50observation.
- suspension,
- boron carbide,
- sapphire wafer,
- material removal rate