Chemical-mechanically polishing large areafree-standing CVD diamond films

ZHANG Pingwei; TONG Tingting; CAI Yunhong

doi:Code:10.13394/j.cnki.jgszz.2018.6.0013

Volume 38 Issue 6

Dec. 2018

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ZHANG Pingwei, TONG Tingting, CAI Yunhong. Chemical-mechanically polishing large areafree-standing CVD diamond films[J]. Diamond & Abrasives Engineering, 2018, 38(6): 69-72. doi: Code:10.13394/j.cnki.jgszz.2018.6.0013

Citation:

ZHANG Pingwei, TONG Tingting, CAI Yunhong. Chemical-mechanically polishing large areafree-standing CVD diamond films[J]. Diamond & Abrasives Engineering, 2018, 38(6): 69-72. doi: Code:10.13394/j.cnki.jgszz.2018.6.0013

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Chemical-mechanically polishing large areafree-standing CVD diamond films

doi: Code:10.13394/j.cnki.jgszz.2018.6.0013

1. Hebei Plasma Diamond Technology Co., Ltd., Shijiazhuang 050000, China;
2. Hebei Institute of Laser, Shijiazhuang 050000, China

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Rev Recd Date: 2018-11-27

Available Online: 2022-07-10

Abstract

Abstract

Chemical mechanical polishing is used to polish large area free-standing CVD diamond films with diameters of 66 mm. The influence of polishing plates (iron plate, asphalt plate and soft cushion) and oxidizing agents (K₂S₂O₈ and K₂FeO₄) on polishing results are investigated. Profilometer (tip radius 5 μm), optical microscope and Raman spectroscopy are used to evaluate the polishing effects of the CVD diamond films. Results show that the material removal rate of iron plate is the highest, while the surface polished by soft cushion is the most uniform with roughness of 2 nm. It is also found that the most effective oxidizing agent is K₂FeO₄. In conclusion, the optimum polishing conditions are soft cushion and K₂FeO₄.
- polishing plate,
- oxidizing agent,
- material removal rate,
- surface roughness