Mechanical lapping and polishing process of polycrystalline diamond wafers

LI Jiao; ZHANG Xiaoqiu; WANG Ziguang; ZHANG Xin; ZHANG Yu

doi:10.13394/j.cnki.jgszz.2024.0017

Volume 45 Issue 1

Mar. 2025

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LI Jiao, ZHANG Xiaoqiu, WANG Ziguang, ZHANG Xin, ZHANG Yu. Mechanical lapping and polishing process of polycrystalline diamond wafers[J]. Diamond & Abrasives Engineering, 2025, 45(1): 86-92. doi: 10.13394/j.cnki.jgszz.2024.0017

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LI Jiao, ZHANG Xiaoqiu, WANG Ziguang, ZHANG Xin, ZHANG Yu. Mechanical lapping and polishing process of polycrystalline diamond wafers[J]. Diamond & Abrasives Engineering, 2025, 45(1): 86-92. doi: 10.13394/j.cnki.jgszz.2024.0017

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Mechanical lapping and polishing process of polycrystalline diamond wafers

doi: 10.13394/j.cnki.jgszz.2024.0017

LI Jiao^{1, 2
,},
ZHANG Xiaoqiu²,
WANG Ziguang^2
,,
ZHANG Xin^{1, 3
,
,},
ZHANG Yu^4
,

1.
Zhengzhou Research Institute for Abrasives Co., Ltd., Zhengzhou 450001, China
2.
School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116028, Liaoning, China
3.
State Key Laboratory for High Performance Tools, Zhengzhou 450001
4.
College of Mechanical and Electrical Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

More Information

Received Date: 2024-01-22
Accepted Date: 2024-08-14
Rev Recd Date: 2024-08-07

Available Online: 2025-03-24

Abstract

Abstract

Objectives Diamond is a critical material potentially or already applied in infrared windows, electronic components and acoustic devices for its excellent optical transmittance, high eletron mobility and high breakdown voltage. Mechanical lapping is one of the mainstream methods for diamond planarization. However, it is more difficult to mechanically planarize polycrystalline diamond due to the grains and the boundaries which may lead to defects and internal stress release. Variable-parameter mechanical lapping are conducted on polycrystalline diamond to investigate the effects of abrasive grain size, lapping pressure and abrasive concentration on material removal rate (R_MRR) and surface roughness R_a. Methods A group of {100} polycrystalline diamond wafers are attached to a load plate with lapping fluid speed of 8 mL/min, rotational speed of 30 r/min and orbital speed of 45 r/min. The grain size (W7～W50), the concentration of fluid (3%～6%) and the loading pressure (0.1～0.4 MPa) are tested for a reasonable process. A surface profiler is used to observe the morphology of three equal division points (800 μm×800 μm) on diamond surface along the diagonal of the 5 mm×5 mm×1 mm wafer. The average roughness are used to characterize the lapping effect. Results It is found that the R_MRR increases with the increase of grain size, reaching its maximum of 25.210 μm/h with grain size of W50 and R_a of 240 nm. But there appears micro cracks on diamond surface. The R_MRR slightly increases as the grain concentration increases from 3% to 5% but decreases at concentration of 6%, varying around 11 μm/h. The MRR also increases from ～8 μm/h to ～17 μm/h as the lapping pressure increases from 0.1 MPa to 0.4 MPa. Conversely, the surface roughness decrease from 240 nm to 100 nm with finer abrasive, which is a dominant factor affecting the surafce quality. The surface roughness also decreases first but increases then with higher lapping pressure and abrasive concentration. Conclusion The optimal process parameters for polycrystalline diamond wafer are determined, namely the lapping pressure of 0.3 MPa, the abrasive grain size of W10 and the lapping fluid concentration of 4%, where the processed polycrytalline diamond wafer achieves the best surface quality of R_a ～96 nm and a corresponding R_MRR of 7.097 μm/h.
- diamond,
- lapping fluid,
- mechanical lapping,
- lapping pressure,
- abrasive grain

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References(20)

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Mechanical lapping and polishing process of polycrystalline diamond wafers

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