Citation: | Effect of Fe3O4 Characteristics on Properties of Solid-phase Fenton Reaction Lapping Pellets for Single-Crystal SiC[J]. Diamond & Abrasives Engineering. doi: 10.13394/j.cnki.jgszz.2022-0008 |
[1] | XUE Mingpu, XIAO Wen, LI Zongtang, WANG Zhankui, SU Jianxiu. Preliminary investigation of dry tribochemical mechanical polishing of single crystal SiC substrates[J]. Diamond & Abrasives Engineering, 2024, 44(1): 101-108. doi: 10.13394/j.cnki.jgszz.2023.0052 |
[2] | HE Yan, LI Xiang, GAO Xingjun, FAN Lin, LIU Ming, XU Zicheng. Modeling of ultra-thin diamond slice and simulation of SiC wafer cutting based on Python language[J]. Diamond & Abrasives Engineering, 2023, 43(5): 621-631. doi: 10.13394/j.cnki.jgszz.2003.0001 |
[3] | PANG Jiwei, LI Sheng, GUO Mingbo, WANG Zhaohui, XI Jianren, YANG Xiaotao. Drilling of C/SiC composite micro holes with electroplated diamond bits[J]. Diamond & Abrasives Engineering, 2023, 43(1): 90-95. doi: 10.13394/j.cnki.jgszz.2022.0026 |
[4] | LIU Jianhe, ZHOU Mingyu. Numerical simulation of multiphysics coupling for magnetic fluid grinding of germanium wafer by rotating magnetic field[J]. Diamond & Abrasives Engineering, 2023, 43(3): 392-400. doi: 10.13394/j.cnki.jgszz.2022.0189 |
[5] | FANG Weisong, YAN Qiusheng, PAN Jisheng, LU Jiabin, CHEN Haiyang. Study on lapping performance of agglomerated diamond abrasive[J]. Diamond & Abrasives Engineering, 2023, 43(6): 684-692. doi: 10.13394/j.cnki.jgszz.2022.0218 |
[6] | DONG Yanhui, NIU Fengli, REN Ze, SHENG Xin, ZHU Yongwei. Comparison of lapping performance between diamond magnetic abrasives and silicon carbide magnetic abrasives[J]. Diamond & Abrasives Engineering, 2023, 43(3): 379-385. doi: 10.13394/j.cnki.jgszz.2022.0154 |
[7] | XU Jinwen, CHEN Song, HU Jinghua, ZHANG Lei, YANG Huan, CHEN Yan. Experimental study on differential processing technology of magnetic particle grinding of elbow[J]. Diamond & Abrasives Engineering, 2022, 42(4): 481-487. doi: 10.13394/j.cnki.jgszz.2021.3005 |
[8] | SUN Baoyu, FU Xingbao, YUAN Xu, GU Yan. Research on ultrasonic vibration grinding technology of SiCp/Al composites[J]. Diamond & Abrasives Engineering, 2022, 42(6): 713-719. doi: 10.13394/j.cnki.jgszz.2022.0016 |
[9] | LIANG Huazhuo, FU Youzhi, HE Junfeng, XU Lanying, YAN Qiusheng. Magnetorheological chemical compound polishing of single crystal SiC substrate[J]. Diamond & Abrasives Engineering, 2022, 42(1): 129-135. doi: 10.13394/j.cnki.jgszz.2021.0108 |
[10] | LU Jiabin, CAO Jiyang, DENG Jiayun, YAN Qiusheng, HU Da. Effect of Fe3O4 characteristics on properties of solid-phase Fenton reaction lapping pellets for single-crystal SiC[J]. Diamond & Abrasives Engineering, 2022, 42(2): 223-232. doi: 10.13394/j.cnki.jgszz.2022.0008 |
[11] | GAO Wei, ZHANG Yinxia, HUANG Pengju. Study on material removal mechanism of 6H-SiC single crystal wafer based on different nano-scratch order[J]. Diamond & Abrasives Engineering, 2021, 41(4): 92-97. doi: 10.13394/j.cnki.jgszz.2021.4.0013 |
[12] | ZHANG Tongqi, YUE Xiaobin, LEI Dajiang, YANG Ning. Simulation study on influence mechanism of abrasive radius on diamond grinding[J]. Diamond & Abrasives Engineering, 2021, 41(1): 89-94. doi: 10.13394/j.cnki.jgszz.2021.1.0015 |
[13] | ZHANG Jiaqian, SHEN Gongming, TANG Chao, ZHU Yongwei. Effect of lapping temperature on performance of hydrophilic fixed abrasive pad[J]. Diamond & Abrasives Engineering, 2020, 40(1): 67-73. doi: 10.13394/j.cnki.jgszz.2020.1.0011 |
[14] | DENG Jiayun, PAN Jisheng, ZHANG Qixiang, GUO Xiaohui, YAN Qiusheng. Research progress in chemical mechanical polishing of single crystal SiC substrates[J]. Diamond & Abrasives Engineering, 2020, 40(1): 79-91. doi: 10.13394/j.cnki.jgszz.2020.1.0013 |
[15] | LU Jiabin, XIONG Qiang, YAN Qiusheng, WANG Xin, BIN Shuiming. Effects of lights modes and abrasives on UV-photocatalysis assisted polishing of 6H-SiC single crystal[J]. Diamond & Abrasives Engineering, 2019, 39(3): 29-37. doi: 10.13394/j.cnki.jgszz.2019.3.0006 |
[16] | YAN Qiusheng, LI Jisong, PAN Jisheng. Experimental research on plane lapping of fused silica glass substrate[J]. Diamond & Abrasives Engineering, 2019, 39(1): 60-65. doi: 10.13394/j.cnki.jgszz.2019.1.0011 |
[17] | JIN Zhenhong, ZHU Yongwei, MO Honglei, WANG Zikun. Influence of slurry on lapping SiC workpiece by using fixed abrasives[J]. Diamond & Abrasives Engineering, 2018, 38(6): 54-60. doi: 10.13394/j.cnki.jgszz.2018.6.0011 |
[18] | SUN Penghui, YAN Ning, LI Xuewen, ZHAO Mengyue, HAN Xin, LI Henan, ZHAO Xinghao. Effect of SiC size on dress ceramic diamond lapping disc[J]. Diamond & Abrasives Engineering, 2016, 36(3): 65-68. doi: 10.13394/j.cnki.jgszz.2016.3.0013 |
[19] | ZHU Lin, ZHU Yongwei, XU Sheng, LI Xinlu, SHEN Qi. Sapphire machined by SiC assisted fixed abrasive lapping[J]. Diamond & Abrasives Engineering, 2016, 36(1): 6-10,24. doi: 10.13394/j.cnki.jgszz.2016.1.0002 |
[20] | LIANG Huazhuo, LU Jiabin, YAN Qiusheng. Machining characteristics of single crystal SiC wafer with copper lapping pad[J]. Diamond & Abrasives Engineering, 2016, 36(6): 6-10,14. doi: 10.13394/j.cnki.jgszz.2016.6.0002 |