CN 41-1243/TG ISSN 1006-852X
Volume 42 Issue 2
May  2022
Turn off MathJax
Article Contents
CHEN Liangxian, SHAO Siwu, LIU Peng, AN Kang, ZHENG Yuting, HUANG Yabo, BAI Mingjie, ZHANG Jianjun, LIU Jinlong, WEI Junjun, LI Chengming. Design and function of cold trap in the process of preparing diamond films by DC arc plasma jet chemical vapor deposition[J]. Diamond & Abrasives Engineering, 2022, 42(2): 150-155. doi: 10.13394/j.cnki.jgszz.2021.0113
Citation: CHEN Liangxian, SHAO Siwu, LIU Peng, AN Kang, ZHENG Yuting, HUANG Yabo, BAI Mingjie, ZHANG Jianjun, LIU Jinlong, WEI Junjun, LI Chengming. Design and function of cold trap in the process of preparing diamond films by DC arc plasma jet chemical vapor deposition[J]. Diamond & Abrasives Engineering, 2022, 42(2): 150-155. doi: 10.13394/j.cnki.jgszz.2021.0113

Design and function of cold trap in the process of preparing diamond films by DC arc plasma jet chemical vapor deposition

doi: 10.13394/j.cnki.jgszz.2021.0113
More Information
  • Received Date: 2021-11-20
  • Accepted Date: 2021-12-29
  • Rev Recd Date: 2021-12-20
  • Firstly, this experiment introduces the principle of the DC arc jet method, the design of the gas circulation system and its advantages and disadvantages. Secondly, the design of the cold trap system and its working principle are introduced in detail. Finally, Raman spectroscopy and Fourier transform infrared spectroscopy are used to compare the quality of the diamond films prepared before and after adding the cold trap system. The results show that the cold trap system can effectively filter the oil vapor in the circulating gas lines and avoid the incorporation of impurities in diamond films. After adding the cold trap system, the impurity in the diamond wafer is reduced, and the half width of the diamond Raman peak is reduced to 6.76 cm−1, which is closed to Ib type single crystal diamond. In addition, the crystal quality and the optical transmittance of the free-standing diamond wafer is significantly improved, and the transmittance at the wavelength of 10.6 μm reaches 68.4%.

     

  • loading
  • [1]
    刘金龙, 李成明, 陈良贤, 等. 氢终结金刚石表面P型导电沟道稳定性研究 [J]. 材料热处理学报,2016,37(7):156-161.

    LIU Jinlong, LI Chengming, CHEN Liangxian, et al. Stability of P-type conductive channel on H-terminated diamond films [J]. Transactions of Materials and Heat Treatment,2016,37(7):156-161.
    [2]
    ANDREEVA M S, ARTYUSHKIN N V, KRYMSKII M I, et al. Effect of CO2-laser power density on the absorption coefficient of polycrystalline CVD diamonds [J]. Quantum Electronics,2020,50(12):1140-1145. doi: 10.1070/QEL17423
    [3]
    AIELLO G, SCHRECK S, AVRAMIDIS K A, et al. Towards large area CVD diamond disks for Brewster-angle windows [J]. Fusion Engineering and Design,2020,157:111818. doi: 10.1016/j.fusengdes.2020.111818
    [4]
    黑立富, 闫雄伯, 朱瑞华, 等. 金刚石自支撑膜的高温红外透过性能 [J]. 材料工程,2017,45(2):1-6. doi: 10.11868/j.issn.1001-4381.2016.000792

    HEI Lifu, YAN Xiongbo, ZHU Ruihua, et al. High temperature infrared transmission of free-standing diamond films [J]. Journal of Materials Engineering,2017,45(2):1-6. doi: 10.11868/j.issn.1001-4381.2016.000792
    [5]
    ASHFOLD M, GOSS J, GREEN B, et al. Nitrogen in diamond [J]. Chemical Reviews,2020,120(12):5745-5794. doi: 10.1021/acs.chemrev.9b00518
    [6]
    LU J Q, YANG B, YU B, et al. Fabrication of diamond nanoneedle arrays containing high-brightness silicon-vacancy centers [J]. Advanced Optical Materials,2021,9(22):2101427.
    [7]
    张玉军, 吕反修, 张建军, 等. 声表面波器件金刚石薄膜基片的制备工艺 [J]. 北京科技大学学报,2008,30(5):544-547.

    ZHANG Yujun, LYU Fanxiu, ZHANG Jianjun, et al. Technique of preparing diamond films on poly-substrate by DC-arc plasma jet CVD for surface acoustic wave devices [J]. Journal of University of Science and Technology Beijing,2008,30(5):544-547.
    [8]
    马宗敏, 柴笑晗, 王军旗, 等. 面向芯片级NV色心量子传感器的微波天线关键技术 [J]. 半导体技术,2020,45(12):905-915.

    MA Zongmin, CHAI Xiaohan, WANG Junqi, et al. Key technology of microwave antenna for chip-level NV color center quantum sensor [J]. Semiconductor Technology,2020,45(12):905-915.
    [9]
    LI C, LIU J, CHEN L, et al. An amazing semiconductor choice for high-frequency FET: H-terminated polycrystalline diamond film prepared by DC arc jet CVD [J]. Physica Status Solidi,2014,11(11/12):1692-1696. doi: 10.1002/pssc.201400076
    [10]
    ZHOU Y, ANAYA J L, POMEROY J, et al. Barrier-layer optimization for enhanced GaN-on-diamond device cooling [J]. ACS Applied Materials & Interfaces,2017,9(39):34416-34422. doi: 10.1021/acsami.7b08961
    [11]
    LIU Z C, ZHAO D, MIN T, et al. Photovoltaic three-dimensional diamond UV photodetector with low dark current and fast response speed fabricated by bottom-up method [J]. IEEE Electron Device Letters,2019,40(7):1186-1189. doi: 10.1109/LED.2019.2919922
    [12]
    廖晓明, 冉均国, 苟立, 等. 薄膜型金刚石辐射剂量计的光电性能 [J]. 四川大学学报,2005,37(5):105-109.

    LIAO Xiaoming, RAN Junguo, GOU Li, et al. Studies on the performance of radiation dosimeters based on diamond thin films [J]. Journal of Sichuan University,2005,37(5):105-109.
    [13]
    GUO J, LIU J, HUA C, et al. Interfacial stress evolution simulation on the graphite substrate/interlayer/diamond film during the cooling process [J]. Diamond and Related Materials,2017,75:12-17. doi: 10.1016/j.diamond.2016.12.017
    [14]
    TANG W, LIU J, HUANG T, et al. Preparation of diamond wafers by DC arc jet plasma process under a gas recycling mode [J]. Diamond and Related Materials,2001,10(3/4/5/6/7):327-331. doi: 10.1016/S0925-9635(00)00592-6
    [15]
    CHEN R, DAI L, ZHU R, et al. Diamond films synthesis with a DC arc plasma jet: effect of substrate temperature on quality of diamond films [J]. Solid State Phenomena,2011,175:245-248. doi: 10.4028/www.scientific.net/SSP.175.245
    [16]
    LYU F, TANG W, ZHONG G, et al. Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode [J]. Diamond and Related Materials,2000,9(9/10):1655-1659. doi: 10.1016/S0925-9635(00)00305-8
    [17]
    YANG J, ZHANG H, LI C, et al. Effects of nitrogen addition on morphology and mechanical property of DC arc plasma jet CVD diamond films [J]. Diamond and Related Materials,2004,13(1):139-144. doi: 10.1016/j.diamond.2003.10.028
    [18]
    刘秀军, 孙振路, 何奇宇, 等. 半开放气体循环方式制备化学气相沉积金刚石膜 [J]. 金刚石与磨料磨具工程,2008,28(2):46-48. doi: 10.3969/j.issn.1006-852X.2008.02.012

    LIU Xiujun, SUN Zhenlu, HE Qiyu, et al. Preparation of CVD diamond by semi-opened cycle gas method [J]. Diamond and Abrasives Engineering,2008,28(2):46-48. doi: 10.3969/j.issn.1006-852X.2008.02.012
    [19]
    LYU F, ZHONG G, SUN J, et al. A new type of DC arc plasma torch for low cost large area diamond deposition [J]. Diamond and Related Materials,1998,7(6):737-741. doi: 10.1016/S0925-9635(97)00180-5
    [20]
    GUO H, SUN Z, HE Q, et al. Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet [J]. Diamond and Related Materials,2000,9(9/10):1673-1677.
    [21]
    ZHU R, LIU J, CHEN L, et al. Research on 1 420 cm-1 characteristic peak of free-standing diamond films in Raman spectrum [J]. Journal of Synthetic Crystals,2015,44(4):867-871.
    [22]
    MA J, ASHFOLD M N R, MANKELEVICH Y A. Validating optical emission spectroscopy as a diagnostic of microwave activated CH4/Ar/H2 plasmas used for diamond chemical vapor deposition [J]. Journal of Applied Physics,2009,105(4):043302. doi: 10.1063/1.3078032
    [23]
    ZENG Q K, WANG L J, SHI L Y, et al. Optimizing hydrogen plasma etching process of preferred (110)-textured diamond film [J]. Surface and Coatings Technology,2013,228((Suppl.1)):S379-S381. doi: 10.1016/j.surfcoat.2012.05.097
    [24]
    LI D S, ZUO D W, CHEN R F, et al. Effect of DC-plasma arc behavior on growth of diamond film [J]. Key Engineering Materials,2006,315/316:385-390. doi: 10.4028/www.scientific.net/KEM.315-316.385
    [25]
    MANKELEVICH Y A, ASHFOLD M N R, ORR-EWING A J. Measurement and modeling of Ar∕H2∕CH4 arc jet discharge chemical vapor deposition reactors II: Modeling of the spatial dependence of expanded plasma parameters and species number densities [J]. Journal of Applied Physics,2007,102(6):063310.1-063310.11. doi: 10.1063/1.2783890
    [26]
    郭建超, 刘金龙, 闫雄伯, 等. 基于FLUENT软件直流电弧等离子体喷射法等离子体放电特征二维数值模拟 [J]. 真空科学与技术学报,2016,36(3):312-318.

    GUO Jianchao, LIU Jinlong, YAN Xiongbo, et al. Numerical simulation of plasma discharge properties in DC arc plasma jet [J]. Chinese Journal of Vacuum Science and Technology,2016,36(3):312-318.
    [27]
    陈孟杰, 李海宁, 王兵, 等. 硼掺杂对单晶金刚石薄膜结构及生长的影响 [J]. 稀有金属,2008,42(12):1294-1300.

    CHEN Mengjie, LI Haining, WANG Bing, et al. Microstructure and growth of epitaxial single diamond films with boron-doping [J]. Chinese Journal of Rare Metals,2008,42(12):1294-1300.
    [28]
    张贺, 李尚升, 宿太超, 等. 温度对Ib型和IIa型金刚石大单晶(100)表面特征的影响 [J]. 物理学报,2015,64(19):334-340.

    ZHANG He, LI Shangsheng, SU Taichao, et al. Effect of temperature on the (100) surface features of type Ib and type IIa large single crystal diamonds [J]. Acta Physica Sinica,2015,64(19):334-340.
    [29]
    贾鑫, 闫雄伯, 安康, 等. 自支撑CVD金刚石膜光学性能与热学性能相关性研究 [J]. 表面技术,2018,47(4):11-16.

    JIA Xin, YAN Xiongbo, AN Kang, et al. Correlation between optical property and thermal property of free-standing CVD diamond films [J]. Surface Technology,2018,47(4):11-16.
    [30]
    RALCHENKO V, PIMENOV S, KONOV V, et al. Nitrogenated nanocrystalline diamond films: Thermal and optical properties [J]. Diamond and Related Materials,2007,16(12):2067-2073. doi: 10.1016/j.diamond.2007.05.005
    [31]
    ZHU R, LI C, CHEN L, et al. Erosion difference of growth and nucleation sides of free-standing diamond films prepared by DC arc plasma jet CVD [J]. Applied Surface Science,2015,355(15):203-208.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(6)

    Article Metrics

    Article views (551) PDF downloads(55) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return