CN 41-1243/TG ISSN 1006-852X
Volume 39 Issue 6
Dec.  2019
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WANG Zhiwei, ZOU Qin, LI Yanguo, YIN Yuhang, CHEN Hongguang, WANG Mingzhi. Development of boron and its synergistic doped diamond blocks[J]. Diamond & Abrasives Engineering, 2019, 39(6): 99-106. doi: 10.13394/j.cnki.jgszz.2019.6.0017
Citation: WANG Zhiwei, ZOU Qin, LI Yanguo, YIN Yuhang, CHEN Hongguang, WANG Mingzhi. Development of boron and its synergistic doped diamond blocks[J]. Diamond & Abrasives Engineering, 2019, 39(6): 99-106. doi: 10.13394/j.cnki.jgszz.2019.6.0017

Development of boron and its synergistic doped diamond blocks

doi: 10.13394/j.cnki.jgszz.2019.6.0017
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  • Rev Recd Date: 2019-10-21
  • Available Online: 2022-04-06
  • The semiconductor properties of diamond can be obtained by adding impurity elements like boron. Diamond semiconductor materials with excellent properties can be prepared by high temperature and pressure method. This paper introduces the research development of boron and its co-doped diamond block materials. It summarizes the influence of doping on the morphology, structure and properties of diamond. The factors that affect the quality of doped diamond under high temperature and pressure are clarified. In the end, this paper looks forward to the application prospect of boron and its co-doped diamond block materials.

     

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