Epitaxial growth of diamond single crystal on surface of milled diamond seeds at high pressure and high temperature

GAO Feng; REN Guozhong; YANG Guangmin

doi:10.13394/j.cnki.jgszz.2017.6.0005

Volume 37 Issue 6

Dec. 2017

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GAO Feng, REN Guozhong, YANG Guangmin. Epitaxial growth of diamond single crystal on surface of milled diamond seeds at high pressure and high temperature[J]. Diamond & Abrasives Engineering, 2017, 37(6): 34-36,40. doi: 10.13394/j.cnki.jgszz.2017.6.0005

Citation:

GAO Feng, REN Guozhong, YANG Guangmin. Epitaxial growth of diamond single crystal on surface of milled diamond seeds at high pressure and high temperature[J]. Diamond & Abrasives Engineering, 2017, 37(6): 34-36,40. doi: 10.13394/j.cnki.jgszz.2017.6.0005

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Epitaxial growth of diamond single crystal on surface of milled diamond seeds at high pressure and high temperature

doi: 10.13394/j.cnki.jgszz.2017.6.0005

School of Physics, Changchun Normal University, Changchun 130032, China

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Rev Recd Date: 2017-10-13

Available Online: 2022-07-27

Abstract

Abstract

Diamond single crystal was epitaxially grown on the surface of diamond seeds with rough planes at high pressure and high temperature (HPHT) conditions.Fe₈₀Ni₂₀ alloy powder was used as catalyst/solvent and natural flake-like graphite was used as carbon source.Diamond single crystals were grown on the diamond seeds at 4.8 GPa and 1500 K.The morphology of the samples was observed by SEM.The mechanism of diamond growth with smooth planes from original seed with rough planes was studied.
- grain size