Mechanism and optimization of chemical-mechanically polishing ceramic glass substrate with CeO_2 slurry

The effects of mass fraction of abrasive,pH value,flow rate of polishing slurry,rotate speed,surfactant types and mass fraction of NH₄ F on the material removal rate and the surface roughness of the ceramic glass substrate were investigated by CeO₂ slurry.The surface roughness of the ceramic glass substrates after being polished was characterized by atomic force microscope.Resultsshow that the material removal rate(MRR)could reach 180.91nm/min and the surface roughness could reach 0.72 nm under the following conditions:the mass fraction of CeO₂3%,the flow rate of slurry 25mL/min,the rotate speed 100r/min,pH=8.0,the mass fraction of lauryl sodium sulfate 0.01%,the mass fraction of NH₄F 0.7%.