Investigation on the chemical mechanical polishing of A-plane sapphire

WANG Jinpu; BAI Linshan; CHU Xiangfeng

doi:10.13394/j.cnki.jgszz.2016.3.0009

Volume 36 Issue 3

Jun. 2016

Turn off MathJax

Article Contents

Article Navigation > Diamond & Abrasives Engineering > 2016 > 36(3): 43-49

WANG Jinpu, BAI Linshan, CHU Xiangfeng. Investigation on the chemical mechanical polishing of A-plane sapphire[J]. Diamond & Abrasives Engineering, 2016, 36(3): 43-49. doi: 10.13394/j.cnki.jgszz.2016.3.0009

Citation:

WANG Jinpu, BAI Linshan, CHU Xiangfeng. Investigation on the chemical mechanical polishing of A-plane sapphire[J]. Diamond & Abrasives Engineering, 2016, 36(3): 43-49. doi: 10.13394/j.cnki.jgszz.2016.3.0009

Citation:

PDF( 1056 KB)

Investigation on the chemical mechanical polishing of A-plane sapphire

doi: 10.13394/j.cnki.jgszz.2016.3.0009

School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, Anhui, China

More Information

Rev Recd Date: 2016-04-12

Available Online: 2022-07-27

Abstract

Abstract

Chemical mechanical polishing is implemented on A-plane sapphire using nano-Al₂O₃ as abrasive to investigate the effect of concentration and particle size of Al₂O₃,polishing time,polishing pressure and the concentration of NH₄F on material removal rate(MRR)and surface roughness of Aplane sapphire.The surface roughness was measured by atomic force microscopy(AFM).The results showed that polishing performance is good with MRR of 18.2nm/min and R_a 22.3 nm when polished at pH=4.0,16.39 kPa for 40 min with NH₄F mass fraction 0.6% NH₄F and 50 nm Al₂O₃ mass fraction 1%.
- A plane sapphire,
- chemical mechanical polishing,
- NH₄F,
- material removal rate,
- surface roughness