Parameter optimization of sapphire wafer lapping with fixed abrasive pad

In order to meet the requirements of the high processing efficiency and low damage of sapphire wafer,hydrophilic fixed abrasive lapping technology was adopted.The effects of silicon carbide particle size in matrix,matrix types,diamond particle size and abrasive in the slurry on material removal rate and surface roughness were investigated.The optimized process parameters for high material removal rate and good surface quality were obtained,which were 5 μm of SiC abrasive in the slurry,35-45 μm of diamond particle by company F,Ⅱof matrix type,10 μm of SiC particle size in matrix.The material removal rate could reach 413.2nm/min and average surface roughness R_a 0.140 2 μm.