Sapphire machined by SiC assisted fixed abrasive lapping

ZHU Lin; ZHU Yongwei; XU Sheng; LI Xinlu; SHEN Qi

doi:10.13394/j.cnki.jgszz.2016.1.0002

Volume 36 Issue 1

Feb. 2016

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ZHU Lin, ZHU Yongwei, XU Sheng, LI Xinlu, SHEN Qi. Sapphire machined by SiC assisted fixed abrasive lapping[J]. Diamond & Abrasives Engineering, 2016, 36(1): 6-10,24. doi: 10.13394/j.cnki.jgszz.2016.1.0002

Citation:

ZHU Lin, ZHU Yongwei, XU Sheng, LI Xinlu, SHEN Qi. Sapphire machined by SiC assisted fixed abrasive lapping[J]. Diamond & Abrasives Engineering, 2016, 36(1): 6-10,24. doi: 10.13394/j.cnki.jgszz.2016.1.0002

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Sapphire machined by SiC assisted fixed abrasive lapping

doi: 10.13394/j.cnki.jgszz.2016.1.0002

College of Mechanical and Electrical Engineering, Nanjing University ofAeronautics and Astronautics, Nanjing 210016, China

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Rev Recd Date: 2015-12-25

Available Online: 2022-07-27

Abstract

Abstract

Owning to insufficient self-conditioning ability affected by tiny chip,sapphire lapped by fixed abrasive pad is limited in industry.SiC particles were added to slurry to assist chips in conditioning pad in this study.Two different pads,one containing diamond abrasives(grain size 20-30 μm)and the other not,were made for experiment.The material removal rate and topography of sapphire at different conditions were compared to explore the influence of SiC on lapping process.Resultsshowed that the SiC particles added to slurry assisted in improving self-conditioning of pad by increasing wear of resins and exposing diamond abrasives out of sub-surface.Material removal rate of slurry with SiC particles was 14 times higher than that of slurry without SiC.
- fixed abrasive pad,
- SiC particles,
- sapphire,
- self-conditioning