碳化硅陶瓷的磨削损伤特性

叶卉; 谢家富; 倪安杰

doi:10.13394/j.cnki.jgszz.2024.0030

碳化硅陶瓷的磨削损伤特性

doi: 10.13394/j.cnki.jgszz.2024.0030

上海理工大学机械工程学院, 上海 200093

基金项目: 国家自然科学基金（62305221）；上海市青年扬帆科技英才计划（18YF1417700）；教育部产学合作协同育人项目（220606071203633）。

详细信息

通讯作者:
叶卉，女，1989年生，副教授。主要研究方向：精密加工与材料激光损伤性能优化。E-mail：yehui513@usst.edu.cn

中图分类号: TB32; TG58
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出版历程
- 收稿日期: 2024-02-19
- 修回日期: 2024-05-16
- 录用日期: 2024-05-24
- 网络出版日期: 2024-05-24
- 刊出日期: 2025-04-20

Grinding damage characteristics of silicon carbide ceramics

Shanghai University of Technology, School of Mechanical Engineering, Shanghai 200093, China

摘要

摘要: 为探究碳化硅陶瓷的磨削损伤特性，通过单颗粒划擦实验和磨削实验，结合有限元仿真，明确碳化硅陶瓷塑脆性去除转变的临界应力值以及磨削参数对材料损伤的影响。单颗粒划擦实验表明，实验中使用的碳化硅陶瓷的断裂强度约为344 MPa。实验与仿真结果都表明：不同载荷下的材料微观结构作用不同，当接触应力小于材料晶界的临界断裂强度时，晶界结构起到黏性作用，消耗应力以抑制裂纹拓展；随着载荷进一步增加，虽未达到材料断裂极限，但材料表面依旧会存在由晶界、石墨相以及气孔等结构破坏而产生的裂纹和坑洞；当接触应力大于材料晶界的临界断裂强度时，其微观结构对裂纹增长起到促进作用，使得碳化硅陶瓷损伤区域进一步扩大。磨削实验表明：优化磨削工艺参数可获得最小的磨粒未变形磨屑厚度和磨削力，从而最小化材料表面损伤比例和亚表面损伤深度，分别为0.396%和4.768 μm，相较于最差参数，其损伤值仅为各自对应值的16.01%和13.22%；材料磨削损伤进程与单颗磨粒划擦损伤进程类似，依次经历塑性去除、塑脆性去除和脆性去除3个阶段，且磨削力、磨粒未变形最大磨屑厚度变化与材料损伤变化趋势相同，即随着进给速度和磨削深度的增加而增大，随着砂轮转速的提高而减小。同时，陶瓷材料的内部结构降低了材料损伤产生阈值，是导致其容易产生加工损伤的重要原因。
- 碳化硅陶瓷 /
- 磨削加工 /
- 磨粒未变形最大磨屑厚度 /
- 表面/亚表面损伤
Abstract: Objectives To explore the grinding damage mechanism and surface/subsurface damage distribution law of silicon carbide ceramics. Methods Combined with single-particle scratching experiments, grinding experiments, and finite element simulation analyses, the critical stress value of the plastic-brittle transition of the material, as well as the trend of the influence of the grinding parameters on the damage distribution, are clarified. Results The ultimate fracture strength of the silicon carbide ceramics used in this experiment is about 344 MPa, and the grain boundary fracture strength is about 25.9 MPa. Both the experimental and simulation results show that the microstructure of the material plays different roles under different loads. When the contact stress is less than the critical fracture strength of the grain boundaries, the grain boundary structure plays a viscous role, consuming stresses to inhibit the expansion of cracks. With a further increase in load, although not reaching the critical stress value of the grain boundaries, the cracks are still generated but not as severe. Further increase in load, although the material fracture limit is not reached, the material surface will still exhibit cracks and pits due to microstructural damage caused by grain boundaries, graphite, and pores. When the contact stress exceeds the critical strength of the material and the grain boundaries, the microstructure promotes the growth of cracks, further expanding the damage area of the SiC ceramics. In the paper, through the optimization of the grinding process parameters, the best parameters for achieving the minimum grit undeformed chip thickness and grinding force are determined, thus minimizing the percentage of material surface damage and the depth of subsurface damage, which are 0.396% and 4.768 μm, respectively. Compared with the worst parameters, the damage values are only 16.01% and 13.22% of their respective counterparts. Conclusions The process of material grinding damage is similar to that of single grit scratch damage, which progresses three stages: plastic removal, plastic-brittle removal, and brittle removal. The grinding force, the change in maximum grit thickness without deformation, and the extent of material damage all tend to increase with the increase of feed rate and grinding depth, and decrease with the increase of grinding wheel speed. The microstructure of ceramic materials is an important reason for their machining susceptibility to machining damage. In order to achieve low-defect processing of silicon carbide ceramics, it is not only necessary to optimize the grinding process parameters but also to consider the role of the microstructure. The experimental results provide theoretical guidance for achieving low-damage and high-quality processing.
- silicon carbide ceramics /
- grinding processing /
- maximum undeformed abrasive debris thickness /
- surface/subsurface damage

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图 1 碳化硅陶瓷显微结构图

Figure 1. Microscopic structure image of silicon carbide ceramics

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图 2 磨削实验装置图

Figure 2. Grinding device diagram

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图 3 截面抛光法示意图

Figure 3. Schematic diagram of cross-section polishing method model

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图 4 碳化硅陶瓷的压痕断裂力学模型示意图

Figure 4. Schematic diagram of indentation fracture mechanics model for silicon carbide ceramics

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图 5 金刚石砂轮磨粒测量结果图

Figure 5. Measurement results of diamond grinding wheel grains

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图 6 磨粒磨屑厚度模拟图

Figure 6. Simulation diagram of abrasive grain and debris thickness

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图 7 不同载荷下划擦表面形貌变化

Figure 7. Changes in scratch surface morphology under different loads

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图 8 碳化硅陶瓷仿真模型

Figure 8. Simulation model of silicon carbide ceramics

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图 9 内聚力单元损伤云图（上）与材料内部应力云图（下）对比

Figure 9. Cohesive unit damage cloud (top) and internal material stress cloud (bottom)

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图 10 磨削力与磨削加工参数的关系

Figure 10. Relationship between grinding force and grinding process parameters

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图 11 磨削力与磨屑厚度的关系

Figure 11. Relationship between grinding force and debris thickness

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图 12 磨削表面损伤占比示意图

Figure 12. Schematic diagram of proportion of surface damage during grinding

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图 13 碳化硅陶瓷工件表面损伤SEM形貌

Figure 13. SEM morphology of surface damage on silicon carbide ceramic workpiece

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图 14 亚表面损伤深度测量

Figure 14. Measurement of subsurface damage depth

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表 1 磨削加工参数及结果

Table 1. Grinding parameters and results

样品编号	进给速度 v_w /（mm·min⁻¹）	磨削速度 v_s /（m·s⁻¹）	磨削深度 a_p / μm	磨屑厚度 h_m / μm	磨削力 F / N	表面损伤比例 n / %	亚表面损伤深度 d / μm
#1	10	5.23	20	0.293	5.187	0.493	10.616
#2	40	5.23	20	0.337	6.491	0.937	13.472
#3	70	5.23	20	0.416	7.273	2.132	22.816
#4	100	5.23	20	0.462	10.537	2.256	28.024
#5	40	1.57	20	0.427	8.904	1.898	25.008
#6	40	3.41	20	0.363	6.642	1.324	13.728
#7	40	5.23	10	0.217	3.358	0.396	4.768
#8	40	5.23	30	0.493	13.594	2.473	36.056

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表 2 碳化硅颗粒JH-2本构模型参数

Table 2. JH-2 constitutive model parameters of silicon carbide particles

参数名称	数值
$ \rho_0 $ / (kg·m⁻³)	3 125
G / GPa	170
A	0.96
N	0.65
B	0.35
M	1
C	0.09
$ \dot{\varepsilon}/\mathrm{s}^{-1} $	1
T / GPa	0.75

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表 3 碳化硅陶瓷晶界内聚力单元模型参数

Table 3. Cohesive model parameters for grain boundaries in silicon carbide ceramics

参数名称	数值或类型
单元类型	晶界内聚力单元
E / GPa	170
v	0.96
T_max/ MPa	0.65
Γ / (J·m⁻²)	0.35

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