Fabrication TiC/Ti3SiC2-diamond composites by spark plasma sintering using different binder
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摘要: 分别以Ti/Si/2TiC混合粉体和Ti3SiC2单相粉体作为结合剂原料,采用放电等离子体烧结技术合成了TiC/Ti3SiC2结合剂金刚石复合材料,探讨不同的结合剂原料和保温时间对TiC/Ti3SiC2结合剂金刚石复合材料的物相构成、微观形貌以及磨削性能的影响。结果表明:采用Ti/Si/2TiC为结合剂原料,保温1 min时,会形成较多量的Ti3SiC2,Ti3SiC2基体与金刚石结合良好,二者之间没有孔隙;当保温5 min时,Ti3SiC2发生分解,基体主相转变为TiC,同时有一定量的Si,金刚石表面被侵蚀,形成凹凸不平的表面。采用Ti3SiC2为结合剂原料时,Ti3SiC2基体发生严重的分解,生成TiC和Si;金刚石与基体间存在一个过渡层,厚度约15 μm。Ti/Si/2TiC为结合剂原料保温1 min时试样的磨耗比值最大,为1 128。单相Ti3SiC2为结合剂的2个试样的磨耗比值约为100左右。Abstract: TiC/Ti3SiC2 bonded diamond composites were fabricated by spark plasma sintering using Ti/Si/2TiC and Ti3SiC2 powders as binder materials.Effect of binder material and holding time on the phase composition, microstructure and grinding properties of composites were studied.The result shows that there forms amounts of Ti3SiC2 when using Ti/Si/2TiC as binder with a holding time of 1 min, and the TiC/Ti3SiC2 bond has a good bond with diamond with no pores.When the holding time is 5 min, Ti3SiC2 decomposes and the main phase of the matrix is transformed to TiC and a certain amount of Si.The diamonds are etched then to form uneven surface.When Ti3SiC2 is used as the binder, the composite decomposes seriously to form TiC and Si.There is a transition layer with a thickness of about 15 μm between diamond and the matrix.In conclusion, the grinding ratio of the sample from Ti/Si/2TiC binder with a holding time of 1 min reaches the maximum value of 1 128, while the grinding ratios of the samples from Ti3SiC2 binder with holding time of 1 min or 5 min were about 100.
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Key words:
- Ti3SiC2 /
- diamond /
- spark plasma sintering /
- raw materials style
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