Abstract: In order to improve the sharpness and machining efficiency of diamond tools and prolong the service life, the surface of diamond particles was processed by low-temperature sintering. The multi-edged diamond particles with different sintering processes were observed and quantitatively analyzed by SEM and mass loss rate. The results show that the best sintering process for the multi-blade treatment of diamond particle is as follows: sintering temperature of 750 ℃, 480 min, oxygenation pumped twice during the sintering process, each time 10 kPa, ventilation 2 min with interval of 2 h. Under this condition, multi-edged diamond particles are processed, and the surface of multi-edged diamond particles with moderate size and uniform pit distribution can be obtained. The grinding experiment on silicon carbide wafer shows that the material removal rate of multi-blade diamond particle is about 1.1 times higher than that of conventional diamond particles. The roughness R_a of the wafer after grinding is about 24% of that of conventional diamond particle, which significantly improves the grinding and polishing efficiency and precision of silicon carbide wafer.