Chemical mechanical planarization of copper sheet with high radius-thickness ratio
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摘要: 以次氯酸钠为氧化剂,六偏磷酸钠为络合剂,OP-10乳化剂为表面活性剂,硅溶胶为磨料配制抛光液(pH 9),对粗抛光后的大径厚比铜片进行化学机械抛光。测量铜片抛光前后的平面度与表面粗糙度,用X射线能谱仪分析铜片表面的元素组成,用X射线衍射仪分析铜片表面的物相及残余应力。试验结果显示:铜片的平面度PV值由抛光前的4.813 μm降至抛光后的2.917 μm,表面粗糙度Ra值由抛光前的31.373 nm降至抛光后的3.776 nm;抛光前后铜片表面的元素组成及物相无明显变化,化学作用与机械作用达到了平衡,磨粒与抛光垫形成的机械作用能迅速去除铜片表面的氧化物层;且化学机械抛光显著降低铜片粗抛光后表面产生的残余应力。Abstract: Using sodium hypochlorite as oxidizer, calgon as complexing agent, OP-10 emulsifier as surface active agent and silica sol as abrasive to make up slurry (pH 9), chemical mechanical polishing of large diameter thickness ratio copper sheet after coarse polishing was carried out. The surface roughness and the flatness of the copper sheet before and after polishing were measured. The elements on the surface of the copper sheet were analyzed by X-ray spectrometer, and the surface phase and residual stress of the copper sheet were analyzed by the X-ray diffractometer. Results show that the flatness PV of the copper sheet is reduced from 4.813 μm before polishing to 2.917 μm after polishing, and the surface roughness Ra decreases from 31.373 nm to 3.776 nm. There is no obvious change in the elemental composition and the phase of the surface of the copper sheet before and after polishing, and the chemical and mechanical effects have reached the balance. The mechanical action of the abrasive and the polishing pad can quickly remove the oxide layer on the surface of the copper sheet. The chemical mechanical polishing can significantly reduce the residual stress on the surface of copper after rough polishing.
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