Investigation on the chemical mechanical polishing of A-plane sapphire
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摘要: 以纳米氧化铝为磨料对A向蓝宝石进行化学机械抛光,实验中考察了磨料浓度、磨料粒径、抛光时间、抛光压力以及NH4F浓度等因素对A向蓝宝石的材料去除速率和表面粗糙度的影响。利用原子力显微镜(AFM)检测抛光后A向蓝宝石的表面粗糙度,系统分析抛光过程中各影响因素,优化实验条件,结果表明:当抛光液中磨料质量分数为1%、磨料粒度尺寸为50nm、抛光时间为40 min、抛光压力为16.39 kPa、NH4F质量分数为0.6%、pH=4.0时,抛光后材料去除速率(MRR)为18.2 nm/min,表面粗糙度值Ra 22.3 nm,抛光效果最好。Abstract: Chemical mechanical polishing is implemented on A-plane sapphire using nano-Al2O3 as abrasive to investigate the effect of concentration and particle size of Al2O3,polishing time,polishing pressure and the concentration of NH4F on material removal rate(MRR)and surface roughness of Aplane sapphire.The surface roughness was measured by atomic force microscopy(AFM).The results showed that polishing performance is good with MRR of 18.2nm/min and Ra 22.3 nm when polished at pH=4.0,16.39 kPa for 40 min with NH4F mass fraction 0.6% NH4F and 50 nm Al2O3 mass fraction 1%.
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Key words:
- A plane sapphire /
- chemical mechanical polishing /
- NH4F /
- material removal rate /
- surface roughness
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