Research on drill-grinding silicon nitride ceramic with thin-wall brazed diamond drill
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摘要: 使用单层钎焊金刚石薄壁钻,进行钻磨氮化硅陶瓷的试验。首先研究氮化硅陶瓷材料的去除机理,主要包括脆性去除和塑性去除,且脆性去除占主要部分。其次研究刀具壁厚、主轴转速和钻压对加工效率的影响。结果表明:三个参数存在的最佳值分别为1.5 mm、710 r/min和613 N;并且壁厚不宜超过2 mm,主轴转速不宜超过900 r/min,钻压应在500~705 N范围内,钻压低于330 N时刀具会打滑。
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关键词:
- 单层钎焊金刚石薄壁钻 /
- 氮化硅陶瓷 /
- 去除机理 /
- 加工效率
Abstract: Silicon nitride ceramic was drill-ground with single-layer brazed diamond thin-wall drill.Firstly,the removal mechanism of silicon nitride ceramic was studied,which mainly included brittle removal and ductile regime removal,and brittle removal was the main removal mechanism.Secondly,the influence of wall thickness,spindle speed and drilling pressure on the machining efficiency was studied.The results showed that three parameters all had optimal values,namely 1.5 mm,710 r/min and 613 N respectively.Wall thickness should not exceed 2 mm,the spindle speed no more than 900 r/min,and the drilling pressure should be within the range of 500 to 705 N.If the drilling pressure was less than 330 N,the cutting tool would slip.
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