Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films

WEI Shaobo; WANG Bing; XIONG Ying

doi:10.13394/j.cnki.jgszz.2022.0122

Volume 43 Issue 2

Apr. 2023

Turn off MathJax

Article Contents

Article Navigation > Diamond & Abrasives Engineering > 2023 > 43(2): 176-181

WEI Shaobo, WANG Bing, XIONG Ying. Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films[J]. Diamond & Abrasives Engineering, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122

Citation:

WEI Shaobo, WANG Bing, XIONG Ying. Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films[J]. Diamond & Abrasives Engineering, 2023, 43(2): 176-181. doi: 10.13394/j.cnki.jgszz.2022.0122

Citation:

PDF( 2091 KB)

Research on the rapid growth and structure of ultra-nanocrystalline diamond thin films

doi: 10.13394/j.cnki.jgszz.2022.0122

WEI Shaobo^{1, 2
,},
WANG Bing^{1
,
,},
XIONG Ying¹

1.
School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, Sichuan, China
2.
State Key Laboratory of Environmentally Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, Sichuan, China

More Information

Received Date: 2022-08-08
Accepted Date: 2022-09-29
Rev Recd Date: 2022-09-24

Abstract

Abstract

Ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapour deposition (MPCVD) at different temperature conditions by adjusting the microwave power. The effects of the activation power of the reaction source and effects of the temperature of the substrate on the growth and composition of the UNCD films were compared and analysed in order to obtain the technique to rapidly grow high-quality UNCD films. SEM, XRD and Raman methods were used to characterise the morphological structure, phase composition and growth rate of the UNCD films, while OES spectroscopy was used to monitor the state of the growth groups during the deposition of the UNCD films. The results showed that the deposition temperature of the UNCD films ranged from 450 to 650 ℃; that the peak intensity of CN and C₂ groups in the OES spectra increased with the increase of power and substrate temperature; that the growth rate increased from 0.82 μm/h to 6.62 μm/h; and that the grain size in the films increased. The average grain size was less than 10.00 nm, and the surface was flatter and smoother, forming a surface profile more favourable to the mechanical properties. Therefore, the use of diisopropylamine liquid small molecules as the reaction source, together with the application of higher microwave power and deposition at higher substrate temperatures, is an effective way to mushroom high-quality UNCD films.
- UNCD film,
- MPCVD,
- substrate temperature,
- growth rate; grain size

FullText(HTML)

References(18)

References

[1]	AUCIELLO O, SUMANT A V. Status review of the science and technology of ultrananocrystalline diamond (UNCD™) films and application to multifunctional devices [J]. Diamond and Related Materials,2010,19(7/8/9):699-718.
[2]	AUCIELLO O. Science and technology of multifunctional ultrananocrystalline diamond (UNCDTM) coatings and applications to a new generation of implantable medical devices [J]. Journal of Biotechnology & Biomaterials,2017,7(2):6-7.
[3]	ZHOU A F, WANG X, PACHECO E, et al. Ultrananocrystalline diamond nanowires: Fabrication, characterization, and sensor applications [J]. Materials (Basel),2021,14(3):661. doi: 10.3390/ma14030661
[4]	AUCIELLO O, ASLAM D M. Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies [J]. Journal of Materials Science,2021,56(12):1-60.
[5]	SANKARAN K J, KURIAN J, CHEN H C, et al. Origin of a needle-like granular structure for ultrananocrystalline diamond films grown in a N₂/CH₄plasma [J]. Journal of Physics D: Applied Physics, 2012, 45(36): 365303.
[6]	谈耀麟. 论UNCD的应用与研发方向(工业金刚石战略发展思考之三) [J]. 超硬材料工程,2011,23(1):36-41. doi: 10.3969/j.issn.1673-1433.2011.01.009 TAN Yaolin. On the application and R&D direction of UNCD (third thought on the strategic development of industrial diamond) [J]. Superabrasives Engineering,2011,23(1):36-41. doi: 10.3969/j.issn.1673-1433.2011.01.009
[7]	SARAVANAN A, HUANG B R, SANKARAN K J, et al. Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH₄/Ar plasma [J]. Applied Physics Letters,2014,104(18):1603-1605.
[8]	TANG C J, NEVES A J, PEREIRA S, et al. Effect of nitrogen and oxygen addition on morphology and texture of diamond films (from polycrystalline to nanocrystalline) [J]. Diamond and Related Materials,2008,17(1):72-78. doi: 10.1016/j.diamond.2007.10.022
[9]	LIN Q, CHEN S, JI Z, et al. A novel growth model for depositing ultrananocrystalline diamond films in CH₄/H₂ chemistry [J]. Surface and Coatings Technology,2021,419(12):72-80.
[10]	SANKARAN K J, HUANG B-R, SARAVANAN A, et al. Nitrogen incorporated ultrananocrystalline diamond microstructures from bias-enhanced microwave N₂/CH₄-plasma chemical vapor deposition [J]. Plasma Processes and Polymers,2016,13(4):419-428. doi: 10.1002/ppap.201500079
[11]	ARENAL R, BRUNO P, MILLER D J, et al. Diamond nanowires and the insulator-metal transition in ultrananocrystalline diamond films [J]. Physical Review B,2007,75(19):434-436.
[12]	BHATTACHARYYA S, AUCIELLO O, BIRRELL J, et al. Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J]. Applied Physics Letters,2001,79(10):1441-1443. doi: 10.1063/1.1400761
[13]	马志斌, 吴建鹏, 陶利平, 等. MPCVD等离子体的发射光谱研究 [J]. 光谱学与光谱分析,2013,33(9):2562-2565. doi: 10.3964/j.issn.1000-0593(2013)09-2562-04 MA Zhibin, WU Jianpeng, TAO Liping, et al. Emission spectroscopic study of MPCVD plasma [J]. Spectroscopy and Spectral Analysis,2013,33(9):2562-2565. doi: 10.3964/j.issn.1000-0593(2013)09-2562-04
[14]	陶利平. MPCVD沉积金刚石薄膜光谱分析 [D]. 武汉: 武汉工程大学, 2013. TAO Liping. Spectral analysis of MPCVD deposited diamond film [D]. Wuhan: Wuhan Institute of Technology, 2013.
[15]	叶嗣林, 王天乐, 黄国波, 等. MPCVD法制备的不同温度的金刚石涂层的微结构及力学性能研究 [J]. 广州化工,2021,49(23):31-34. doi: 10.3969/j.issn.1001-9677.2021.23.010 YE Silin, WANG Tianle, HUANG Guobo, et al. Study on microstructure and mechanical properties of diamond coatings prepared by MPCVD method at different temperatures [J]. Guangzhou Chemical Industry,2021,49(23):31-34. doi: 10.3969/j.issn.1001-9677.2021.23.010
[16]	江彩义, 髙冀芸, 郭胜惠, 等. 氧气流量对MPCVD法制备超纳米金刚石膜的影响 [J]. 材料导报,2017,31(S1):66-69. JIANG Caiyi, GAO Jiyun, GUO Shenghui, et al. Effect of oxygen flow rate on the preparation of ultra-nanodiamond films by MPCVD [J]. Materials Direct,2017,31(S1):66-69.
[17]	PANDA K, KUMAR N, PANIGRAHI B K, et al. Tribological properties of N⁺ ion implanted ultrananocrystalline diamond films [J]. Tribology International,2013,57:124-136. doi: 10.1016/j.triboint.2012.07.016
[18]	SANKARAN K J, KUMAR N, KURIAN J, et al. Improvement in tribological properties by modification of grain boundary and microstructure of ultrananocrystalline diamond films [J]. Acs Appl Mater Interfaces,2013,5(9):3614-3624. doi: 10.1021/am303144m